All Transistors. RT2N09M Datasheet

 

RT2N09M Datasheet and Replacement


   Type Designator: RT2N09M
   SMD Transistor Code: ND
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.047
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC-88A
 

 RT2N09M Substitution

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RT2N09M Datasheet (PDF)

 ..1. Size:190K  isahaya
rt2n09m.pdf pdf_icon

RT2N09M

RT2N09M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N09M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

 9.1. Size:202K  isahaya
rt2n04m.pdf pdf_icon

RT2N09M

RT2N04M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N04M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=22k, R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

 9.2. Size:190K  isahaya
rt2n02m.pdf pdf_icon

RT2N09M

RT2N02M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N02M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=4.7k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Int

 9.3. Size:195K  isahaya
rt2n08m.pdf pdf_icon

RT2N09M

RT2N08M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N08M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=2.2k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

Datasheet: RT2N01M , RT2N02M , RT2N03M , RT2N04M , RT2N05M , RT2N06M , RT2N07M , RT2N08M , S9014 , RT2N10M , RT2N11M , RT2N12M , RT2N13M , RT2N14M , RT2N15M , RT2N16M , RT2N17M .

History: FN1F4Z | AFZ11 | SCG118 | MPSL08 | BUH517 | HEPS3011 | MMUN2216L

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