All Transistors. RT2N12M Datasheet

 

RT2N12M Datasheet and Replacement


   Type Designator: RT2N12M
   SMD Transistor Code: NH
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC-88A
 

 RT2N12M Substitution

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RT2N12M Datasheet (PDF)

 ..1. Size:207K  isahaya
 rt2n12m.pdf pdf_icon

RT2N12M

RT2N12M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N12M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

 9.1. Size:166K  isahaya
 rt2n13m.pdf pdf_icon

RT2N12M

RT2N13M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N13M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k, R2=4.7k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

 9.2. Size:165K  isahaya
 rt2n17m.pdf pdf_icon

RT2N12M

RT2N17M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N17M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k, R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

 9.3. Size:207K  isahaya
 rt2n14m.pdf pdf_icon

RT2N12M

RT2N14M Composite Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2N14M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

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Datasheet: RT2N04M , RT2N05M , RT2N06M , RT2N07M , RT2N08M , RT2N09M , RT2N10M , RT2N11M , TIP31C , RT2N13M , RT2N14M , RT2N15M , RT2N16M , RT2N17M , RT2N18M , RT2N19M , RT2N20M .

History: BLS3135-65 | BC857M | DT3301 | MMBR901 | MMUN2216LT1G | KSC2785

Keywords - RT2N12M transistor datasheet

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