All Transistors. RT2P11M Datasheet

 

RT2P11M Datasheet and Replacement


   Type Designator: RT2P11M
   SMD Transistor Code: P4
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 22 kOhm
   Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SC-88A
      - BJT Cross-Reference Search

   

RT2P11M Datasheet (PDF)

 ..1. Size:166K  isahaya
 rt2p11m.pdf pdf_icon

RT2P11M

RT2P11M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P11M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=22k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

 9.1. Size:165K  isahaya
 rt2p16m.pdf pdf_icon

RT2P11M

RT2P16M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P16M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=47k, R2=10k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

 9.2. Size:201K  isahaya
 rt2p14m.pdf pdf_icon

RT2P11M

RT2P14M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P14M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=10k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inter

 9.3. Size:205K  isahaya
 rt2p12m.pdf pdf_icon

RT2P11M

RT2P12M Composite Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT2P12M is composite transistor with built-in 1.25 bias resistor. FEATURE Built-in bias resistor (R1=4.7k, R2=47k) Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Inte

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History: TD645 | 2SB1188SQ-R | SRA2206 | 3DF5 | 2N201 | DTA144WET1G | 2SC2330R

Keywords - RT2P11M transistor datasheet

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