RT3N11M Datasheet, Equivalent, Cross Reference Search
Type Designator: RT3N11M
SMD Transistor Code: N11
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SC-88
RT3N11M Transistor Equivalent Substitute - Cross-Reference Search
RT3N11M Datasheet (PDF)
rt3n11m.pdf
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RT3N11M Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT3N11M is composite transistor built with two 1.25 RT1N141 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inver
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