All Transistors. RT3N44M Datasheet

 

RT3N44M Datasheet and Replacement


   Type Designator: RT3N44M
   SMD Transistor Code: N44
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 22 kOhm
   Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SC-88
 

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RT3N44M Datasheet (PDF)

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RT3N44M

RT3N44M Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT3N44M is composite transistor built with two 1.25 RT1N434 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inver

Datasheet: RT2P25M , RT2P26M , RT2P27M , RT2P28M , RT2P29M , RT3N11M , RT3N22M , RT3N33M , TIP32C , RT3N55M , RT3N66M , RT3N77M , RT3NAAM , RT3NBBM , RT3NCCM , RT3NDDM , RT3NEEM .

History: 2N2580 | BC211E | GES3414 | BSR62 | 2SC4836 | 3CA80F | DRC4113Z

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