RT3NXXM Datasheet and Replacement
Type Designator: RT3NXXM
SMD Transistor Code: NXX
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R2 = 100 kOhm
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 82
Noise Figure, dB: -
Package: SC-88
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RT3NXXM Datasheet (PDF)
rt3nxxm.pdf

RT3NXXM Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT3NXXM is composite transistor built with two 1.25 RT1N15B chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inver
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SC1262 | 2SA1483 | BC167 | ECG2360 | BDX85B | BSV28M | SGSF321
Keywords - RT3NXXM transistor datasheet
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History: 2SC1262 | 2SA1483 | BC167 | ECG2360 | BDX85B | BSV28M | SGSF321



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