All Transistors. RT3NXXM Datasheet

 

RT3NXXM Datasheet and Replacement


   Type Designator: RT3NXXM
   SMD Transistor Code: NXX
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R2 = 100 kOhm
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 82
   Noise Figure, dB: -
   Package: SC-88
 

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RT3NXXM Datasheet (PDF)

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RT3NXXM

RT3NXXM Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT3NXXM is composite transistor built with two 1.25 RT1N15B chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inver

Datasheet: RT3NPPM , RT3NQQM , RT3NRRM , RT3NSSM , RT3NTTM , RT3NUUM , RT3NVVM , RT3NWWM , A1015 , RT3P11M , RT3P33M , RT3P55M , RT3P66M , RT3P77M , RT3PDDM , RT3PEEM , RT3PFFM .

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