All Transistors. RT3T77M Datasheet

 

RT3T77M Datasheet and Replacement


   Type Designator: RT3T77M
   SMD Transistor Code: T77
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SC-88
 

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RT3T77M Datasheet (PDF)

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RT3T77M

PRELIMINARY RT3T77M Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm RT3T77M is compound transistor built with RT1N140 chip and RT1P140 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switchin

Datasheet: RT3PEEM , RT3PFFM , RT3PRRM , RT3T11M , RT3T14M , RT3T22M , RT3T33M , RT3T66M , BC557 , RT3TAAM , RT3TBBM , RT3TCCM , RT3TDDM , RT3TFFM , RT3TGGM , RT3THHM , RT3TLLM .

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