All Transistors. RT5N227C Datasheet

 

RT5N227C Datasheet and Replacement


   Type Designator: RT5N227C
   SMD Transistor Code: N5
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 0.22 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm
   Typical Resistor Ratio R1/R2 = 0.047
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 47
   Noise Figure, dB: -
   Package: SC-59
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RT5N227C Datasheet (PDF)

 ..1. Size:147K  isahaya
 rt5n227c.pdf pdf_icon

RT5N227C

RT5N227C Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unit: mm RT5N227C is a one chip transistor with built-in bias resistor, PNP type is RT5P227C. 2.8 0.65 1.5 0.65 FEATURE Built-in bias resistor R =0.22k, R =4.7k 1 2High collector current Ic=0.5A Mini package for easy mounting

 9.1. Size:145K  isahaya
 rt5n234c.pdf pdf_icon

RT5N227C

RT5N234C Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unit: mm RT5N234C is a one chip transistor with built-in bias 2.8 0.65 1.5 0.65 resistor, PNP type is RT5P234C. FEATURE Built-in bias resistor R =2.2k, R =10k 1 2High collector current Ic=0.5A Mini package for easy mounting

 9.2. Size:135K  isahaya
 rt5n230c.pdf pdf_icon

RT5N227C

PRELIMINARY RT5N230C Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeOUTLINE DRAWING Unit: mm DESCRIPTION RT5N230C is a one chip transistor with built-in bias 2.8 resistor, PNP type is RT5P230C. 0.65 1.5 0.65 FEATURE Built-in bias resistor R =2.2k 1High collector current Ic=0.5A Mini package for easy mounting

 9.3. Size:145K  isahaya
 rt5n234s.pdf pdf_icon

RT5N227C

RT5N234S Transistor With ResistorFor Switching ApplicationSilicon NPN Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unit: mm RT5N234S is a one chip transistor with built-in bias resistor. 4.0 FEATURE Built-in bias resistor R =2.2k, R =10k 1 2High collector current Ic=0.5A 0.1 Mini package for easy mounting 0.45 APPLICATION 2.5 2.5 Inverted circuit,

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History: MMBT4122 | 2SD900 | 2SA1051A | 2SA843 | BUV46A | 2SB464 | 2N1963

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