All Transistors. RT5P431S Datasheet

 

RT5P431S Datasheet, Equivalent, Cross Reference Search


   Type Designator: RT5P431S
   SMD Transistor Code: B431
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 47
   Noise Figure, dB: -
   Package: TO-92S

 RT5P431S Transistor Equivalent Substitute - Cross-Reference Search

   

RT5P431S Datasheet (PDF)

 ..1. Size:146K  isahaya
rt5p431s.pdf

RT5P431S
RT5P431S

RT5P431S Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unit: mm RT5P431S is a one chip transistor with built-in bias 4.0 resistor. FEATURE Built-in bias resistor R =4.7k, R =4.7k 1 20.1 High collector current Ic=-0.5A 0.45 Mini package for easy mounting 2.5 2.5 APPLICATION Inverted circ

 7.1. Size:146K  isahaya
rt5p431c.pdf

RT5P431S
RT5P431S

RT5P431C Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unit: mm 2.8 RT5P431C is a one chip transistor with built-in bias 0.65 1.5 0.65 resistor. FEATURE Built-in bias resistor R =4.7k, R =4.7k 1 2High collector current Ic=-0.5A Mini package for easy mounting APPLICATION Inve

 8.1. Size:255K  isahaya
rt5p430c.pdf

RT5P431S
RT5P431S

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
Back to Top