RTAN430M Datasheet, Equivalent, Cross Reference Search

   Type Designator: RTAN430M
   SMD Transistor Code: QA
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 40 V
   Maximum Collector Current |Ic max|: 0.4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 38 MHz
   Forward Current Transfer Ratio (hFE), MIN: 820
   Noise Figure, dB: -
   Package: SC-70

RTAN430M Transistor Equivalent Substitute - Cross-Reference Search