RTAN430M Specs and Replacement

Type Designator: RTAN430M

SMD Transistor Code: QA

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 40 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 38 MHz

Forward Current Transfer Ratio (hFE), MIN: 820

Noise Figure, dB: -

Package: SC-70

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RTAN430M datasheet

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RTAN430M

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Detailed specifications: RT5P431S, RTAN140C, RTAN140M, RTAN140U, RTAN230C, RTAN230M, RTAN230U, RTAN430C, 2SC5198, RTAN430U, RTBN131AP1, RTBN141AP1, RTBN14BAP1, RTBN226AP1, RTBN234AP1, RTBN426AP1, RTBN432AP1

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