RTBN131AP1 Specs and Replacement

Type Designator: RTBN131AP1

SMD Transistor Code: NK

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 1 kOhm

Built in Bias Resistor R2 = 1 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SC-62

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RTBN131AP1 datasheet

 ..1. Size:112K  isahaya

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 9.1. Size:111K  isahaya

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 9.2. Size:111K  isahaya

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Detailed specifications: RTAN140M, RTAN140U, RTAN230C, RTAN230M, RTAN230U, RTAN430C, RTAN430M, RTAN430U, D965, RTBN141AP1, RTBN14BAP1, RTBN226AP1, RTBN234AP1, RTBN426AP1, RTBN432AP1, RTGN131AP, RTGN141AP

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