RTBN131AP1 Datasheet, Equivalent, Cross Reference Search
Type Designator: RTBN131AP1
SMD Transistor Code: NK
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 1 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.5
W
Maximum Collector-Base Voltage |Vcb|: 80
V
Maximum Collector-Emitter Voltage |Vce|: 60
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SC-62
RTBN131AP1 Transistor Equivalent Substitute - Cross-Reference Search
RTBN131AP1 Datasheet (PDF)
rtbn131ap1.pdf
SMALL-SIGNAL TRANSISTORPRELIMINARY RTBN131AP1 NoticeThis is not a final specification Some parametric are subject to change. TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm RTBN131AP1 is a one chip transistor with built-in bias transistor. 4.6 MAX1.51.6FEATURE Built-in bias resistor
rtbn14bap1.pdf
SMALL-SIGNAL TRANSISTORPRELIMINARY RTBN14BAP1 NoticeThis is not a final specification Some parametric are subject to change. TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm RTBN14BAP1 is a one chip transistor with built-in bias transistor. 4.6 MAX1.51.6FEATURE Built-in bias resistor
rtbn141ap1.pdf
SMALL-SIGNAL TRANSISTORPRELIMINARY RTBN141AP1 NoticeThis is not a final specification Some parametric are subject to change. TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm RTBN141AP1 is a one chip transistor with built-in bias transistor. 4.6 MAX1.51.6FEATURE Built-in bias resistor
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
