RTBN14BAP1 Datasheet and Replacement
Type Designator: RTBN14BAP1
SMD Transistor Code: NP
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R2 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SC-62
RTBN14BAP1 Substitution
RTBN14BAP1 Datasheet (PDF)
rtbn14bap1.pdf

SMALL-SIGNAL TRANSISTORPRELIMINARY RTBN14BAP1 NoticeThis is not a final specification Some parametric are subject to change. TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm RTBN14BAP1 is a one chip transistor with built-in bias transistor. 4.6 MAX1.51.6FEATURE Built-in bias resistor
rtbn141ap1.pdf

SMALL-SIGNAL TRANSISTORPRELIMINARY RTBN141AP1 NoticeThis is not a final specification Some parametric are subject to change. TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm RTBN141AP1 is a one chip transistor with built-in bias transistor. 4.6 MAX1.51.6FEATURE Built-in bias resistor
rtbn131ap1.pdf

SMALL-SIGNAL TRANSISTORPRELIMINARY RTBN131AP1 NoticeThis is not a final specification Some parametric are subject to change. TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm RTBN131AP1 is a one chip transistor with built-in bias transistor. 4.6 MAX1.51.6FEATURE Built-in bias resistor
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SA1208
Keywords - RTBN14BAP1 transistor datasheet
RTBN14BAP1 cross reference
RTBN14BAP1 equivalent finder
RTBN14BAP1 lookup
RTBN14BAP1 substitution
RTBN14BAP1 replacement
History: 2SA1208



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