RTGN131AP Datasheet, Equivalent, Cross Reference Search
Type Designator: RTGN131AP
SMD Transistor Code: NB
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 1 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.5
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT89
RTGN131AP Transistor Equivalent Substitute - Cross-Reference Search
RTGN131AP Datasheet (PDF)
rtgn131ap.pdf
SMALL-SIGNAL TRANSISTOR RTGN131AP TRANSISTOR WITH RESISTORFOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWING Unitmm DISCRIPTION RTGN131AP is a one chip transistor with 4.6 MAX1.5built-in bias transistor. 1.6FEATURE Built-in bias resistor R1=1k,R2=1k 4.2 MAX 2.5 High collector current IC=1A E CB0.8 MIN Built-in
rtgn14bap.pdf
SMALL-SIGNAL TRANSISTOR RTGN14BAP TRANSISTOR WITH RESISTORFOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWING Unitmm DISCRIPTION RTGN14BAP is a one chip transistor with 4.6 MAX1.5built-in bias transistor. 1.6FEATURE Built-in bias resistor R2=10k 4.2 MAX 2.5 High collector current IC=1A E CB0.8 MIN Built-in zener d
rtgn141ap.pdf
SMALL-SIGNAL TRANSISTOR RTGN141AP TRANSISTOR WITH RESISTORFOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWING Unitmm DISCRIPTION 4.4RTGN141AP is a one chip transistor with 1.5 1.6built-in bias transistor. FEATURE Built-in bias resistor R1=10k,R2=10k High collector current IC=1A Built-in zener diode betw
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
