RTGN141AP Datasheet, Equivalent, Cross Reference Search
Type Designator: RTGN141AP
SMD Transistor Code: NC
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.5
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT89
RTGN141AP Transistor Equivalent Substitute - Cross-Reference Search
RTGN141AP Datasheet (PDF)
rtgn141ap.pdf
SMALL-SIGNAL TRANSISTOR RTGN141AP TRANSISTOR WITH RESISTORFOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWING Unitmm DISCRIPTION 4.4RTGN141AP is a one chip transistor with 1.5 1.6built-in bias transistor. FEATURE Built-in bias resistor R1=10k,R2=10k High collector current IC=1A Built-in zener diode betw
rtgn14bap.pdf
SMALL-SIGNAL TRANSISTOR RTGN14BAP TRANSISTOR WITH RESISTORFOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWING Unitmm DISCRIPTION RTGN14BAP is a one chip transistor with 4.6 MAX1.5built-in bias transistor. 1.6FEATURE Built-in bias resistor R2=10k 4.2 MAX 2.5 High collector current IC=1A E CB0.8 MIN Built-in zener d
rtgn131ap.pdf
SMALL-SIGNAL TRANSISTOR RTGN131AP TRANSISTOR WITH RESISTORFOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWING Unitmm DISCRIPTION RTGN131AP is a one chip transistor with 4.6 MAX1.5built-in bias transistor. 1.6FEATURE Built-in bias resistor R1=1k,R2=1k 4.2 MAX 2.5 High collector current IC=1A E CB0.8 MIN Built-in
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
