All Transistors. 2SA1116 Datasheet

 

2SA1116 Datasheet and Replacement


   Type Designator: 2SA1116
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3
 

 2SA1116 Substitution

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2SA1116 Datasheet (PDF)

 ..1. Size:37K  no
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2SA1116

 ..2. Size:146K  jmnic
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2SA1116

JMnic Product Specification Silicon PNP Power Transistors 2SA1116 DESCRIPTION With TO-3 package Complement to type 2SC2607 APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITION

 ..3. Size:207K  inchange semiconductor
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2SA1116

isc Silicon PNP Power Transistor 2SA1116DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min.)(BR)CEOHigh Power DissipationComplement to Type 2SC2607Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

 8.1. Size:39K  no
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2SA1116

Datasheet: 2SA1109 , 2SA111 , 2SA1110 , 2SA1111 , 2SA1112 , 2SA1113 , 2SA1114 , 2SA1115 , 100DA025D , 2SA1117 , 2SA112 , 2SA1120 , 2SA1121 , 2SA1121B , 2SA1121C , 2SA1121D , 2SA1122 .

History: 2SA1015-GR | ZTX951 | 2SA1419S | 2N3826

Keywords - 2SA1116 transistor datasheet

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