2SA1116 Datasheet and Replacement
Type Designator: 2SA1116
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 150
W
Maximum Collector-Base Voltage |Vcb|: 200
V
Maximum Collector-Emitter Voltage |Vce|: 200
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 15
A
Max. Operating Junction Temperature (Tj): 125
°C
Transition Frequency (ft): 20
MHz
Collector Capacitance (Cc): 7
pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package:
TO3
-
BJT ⓘ Cross-Reference Search
2SA1116 Datasheet (PDF)
..2. Size:146K jmnic
2sa1116.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1116 DESCRIPTION With TO-3 package Complement to type 2SC2607 APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITION
..3. Size:207K inchange semiconductor
2sa1116.pdf 

isc Silicon PNP Power Transistor 2SA1116DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min.)(BR)CEOHigh Power DissipationComplement to Type 2SC2607Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
8.2. Size:182K jmnic
2sa1110.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1110 DESCRIPTION With TO-126 package Complement to type 2SC2590 Excellent current IC characteristics of forward current transfer ratio hFE vs. collector High transition frequency fT Optimum for the driver stage of a 40w to 60w output amplifier APPLICATIONS For low-frequency power amplification PI
8.3. Size:144K jmnic
2sa1117.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1117 DESCRIPTION With TO-3 package High power dissipations APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS V
8.4. Size:195K jmnic
2sa1112.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION With TO-220 package Complement to type 2SC2591/2592 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol
8.5. Size:215K inchange semiconductor
2sa1110.pdf 

isc Silicon PNP Power Transistor 2SA1110DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -120V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2590Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VAL
8.6. Size:123K inchange semiconductor
2sa1111 2sa1112.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION With TO-220 package Complement to type 2SC2591/2592 Good linearity of hFEHigh VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-
8.7. Size:207K inchange semiconductor
2sa1117.pdf 

isc Silicon PNP Power Transistor 2SA1117DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min.)(BR)CEOHigh Power DissipationComplement to Type 2SC2608Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
8.8. Size:220K inchange semiconductor
2sa1111.pdf 

isc Silicon PNP Power Transistor 2SA1111DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2591Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency drivers and high poweramplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SY
8.9. Size:220K inchange semiconductor
2sa1112.pdf 

isc Silicon PNP Power Transistor 2SA1112DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -180V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2592Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency drivers and high poweramplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SY
Datasheet: 2SA1109
, 2SA111
, 2SA1110
, 2SA1111
, 2SA1112
, 2SA1113
, 2SA1114
, 2SA1115
, 100DA025D
, 2SA1117
, 2SA112
, 2SA1120
, 2SA1121
, 2SA1121B
, 2SA1121C
, 2SA1121D
, 2SA1122
.
History: 2SA1015-GR
| ZTX951
| 2SA1419S
| 2N3826
Keywords - 2SA1116 transistor datasheet
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