All Transistors. 2SA1116 Datasheet

 

2SA1116 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA1116

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 125 ¬įC

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

2SA1116 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA1116 Datasheet (PDF)

1.1. 2sa1116.pdf Size:37K _no

2SA1116

1.2. 2sa1116.pdf Size:146K _jmnic

2SA1116
2SA1116

JMnic Product Specification Silicon PNP Power Transistors 2SA1116 DESCRIPTION ·With TO-3 package ·Complement to type 2SC2607 APPLICATIONS ·For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VAL

 1.3. 2sa1116.pdf Size:49K _inchange_semiconductor

2SA1116
2SA1116

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO

Datasheet: 2SA1109 , 2SA111 , 2SA1110 , 2SA1111 , 2SA1112 , 2SA1113 , 2SA1114 , 2SA1115 , TIP122 , 2SA1117 , 2SA112 , 2SA1120 , 2SA1121 , 2SA1121B , 2SA1121C , 2SA1121D , 2SA1122 .

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