All Transistors. FA1L3Z-L36 Datasheet

 

FA1L3Z-L36 Datasheet, Equivalent, Cross Reference Search

Type Designator: FA1L3Z-L36

SMD Transistor Code: L36

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 135

Noise Figure, dB: -

Package: MINI-MOLD

FA1L3Z-L36 Transistor Equivalent Substitute - Cross-Reference Search

 

FA1L3Z-L36 Datasheet (PDF)

4.1. fa1l3z.pdf Size:160K _update_bjt

FA1L3Z-L36
FA1L3Z-L36



5.1. fa1l3m.pdf Size:151K _nec

FA1L3Z-L36
FA1L3Z-L36



5.2. fa1l3n.pdf Size:156K _nec

FA1L3Z-L36
FA1L3Z-L36



Datasheet: 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 , 2SC631 , BF494 , 2SC631AS , 2SC632 , 2SC632A , 2SC633 , 2SC633A , 2SC634 , 2SC634A , 2SC635 .

 

 
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BJT: 3DD2553 | 2SD1710C | NP061A3 | KTC601UY | KSC5802D | FA1L3Z-L38 | FA1L3Z-L37 | FA1L3Z-L36 | EB102 | DC8550E | DC8550D | DC8550C | DC8550B | CHTA27XPT | CHT858BWPTS | CHT858BWPTR | CHT858BWPTQ | CHT857BTPTS | CHT857BTPTR | CHT857BTPTQ |

 

 

 
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