FA1L3Z-L36 Specs and Replacement
Type Designator: FA1L3Z-L36
SMD Transistor Code: L36
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 135
Noise Figure, dB: -
Package: MINI-MOLD
FA1L3Z-L36 Transistor Equivalent Substitute - Cross-Reference Search
FA1L3Z-L36 detailed specifications
Detailed specifications: CHT858BWPTR , CHT858BWPTS , CHTA27XPT , DC8550B , DC8550C , DC8550D , DC8550E , EB102 , BC548 , FA1L3Z-L37 , FA1L3Z-L38 , KSC5802D , KTC601UY , NP061A3 , 2SD1710C , 3DD2553 , 3DA4544R .
History: 3DD880 | S9018-MS | BC355A | MMBTA42-MS | 2SC292
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