2SA1121B Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1121B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO236
2SA1121B Transistor Equivalent Substitute - Cross-Reference Search
2SA1121B Datasheet (PDF)
r07ds0271ej 2sa1121-1.pdf
Preliminary Datasheet R07DS0271EJ03002SA1121 (Previous: REJ03G0636-0200)Rev.3.00Silicon PNP Epitaxial Mar 28, 2011Application Low frequency amplifier Complementary pair with 2SC2618 Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)1. Emitter32. Base3. Collector12Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollec
2sa1121.pdf
2SA1121Silicon PNP EpitaxialApplication Low frequency amplifier Complementary pair with 2SC2618OutlineMPAK311. Emitter2. Base23. Collector2SA1121Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 35 VCollector to emitter voltage VCEO 35 VEmitter to base voltage VEBO 4 VCollector current IC 500 mA
2sa1121.pdf
SMD Type orSMD Type TransistICsPNP Transistors2SA1121SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13Features Low frequency amplifier Complementary pair with 2SC26181 2+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO -35 VCollector to emitter
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
