UNR511H PDF Specs and Replacement
Type Designator: UNR511H
SMD Transistor Code: 6P
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.22
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SC70
UNR511H Substitution
UNR511H PDF detailed specifications
unr511x un511x series.pdf
Transistors with built-in Resistor UNR511x Series (UN511x Series) Silicon PNP epitaxial planar type Unit mm For digital circuits 0.15+0.10 0.3+0.1 0.05 0.0 3 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts 1 2 S-Mini type package, allowing automatic insertion through the tape/ magazine packing (0.65) (0.65)... See More ⇒
Detailed specifications: UNR5115 , UNR5116 , UNR5117 , UNR5118 , UNR5119 , UNR511D , UNR511E , UNR511F , TIP42C , UNR511L , UNR511M , UNR511N , UNR511T , UNR511V , UNR511Z , UN5110 , UN5111 .
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