2SA1123 PDF and Equivalents Search

 

2SA1123 Specs and Replacement

Type Designator: 2SA1123

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 65

Noise Figure, dB: -

Package: TO92

 2SA1123 Substitution

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2SA1123 datasheet

 ..1. Size:36K  panasonic

2sa1123.pdf pdf_icon

2SA1123

Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SC2631 5.0 0.2 4.0 0.2 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which... See More ⇒

 ..2. Size:40K  panasonic

2sa1123 e.pdf pdf_icon

2SA1123

Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SC2631 5.0 0.2 4.0 0.2 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which... See More ⇒

 8.1. Size:86K  renesas

r07ds0271ej 2sa1121-1.pdf pdf_icon

2SA1123

Preliminary Datasheet R07DS0271EJ0300 2SA1121 (Previous REJ03G0636-0200) Rev.3.00 Silicon PNP Epitaxial Mar 28, 2011 Application Low frequency amplifier Complementary pair with 2SC2618 Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 1. Emitter 3 2. Base 3. Collector 1 2 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collec... See More ⇒

 8.2. Size:103K  nec

2sa1129.pdf pdf_icon

2SA1123

DATA SHEET SILICON POWER TRANSISTOR 2SA1129 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SA1129 is a mold power transistor developed for mid-speed ORDERING INFORMATION switching, and is ideal for use as a ramp driver. Part No. Package 2SA1129 TO-220AB FEATURES Large current capacity with small package IC(DC) = -7.0 A (TO-220AB)... See More ⇒

Detailed specifications: 2SA1121, 2SA1121B, 2SA1121C, 2SA1121D, 2SA1122, 2SA1122C, 2SA1122D, 2SA1122E, 2SC1815, 2SA1124, 2SA1125, 2SA1126, 2SA1127, 2SA1128, 2SA1129, 2SA113, 2SA1133

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