UNR511T PDF Specs and Replacement
Type Designator: UNR511T
SMD Transistor Code: EY
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SC70
UNR511T Substitution
UNR511T PDF detailed specifications
unr511x un511x series.pdf
Transistors with built-in Resistor UNR511x Series (UN511x Series) Silicon PNP epitaxial planar type Unit mm For digital circuits 0.15+0.10 0.3+0.1 0.05 0.0 3 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts 1 2 S-Mini type package, allowing automatic insertion through the tape/ magazine packing (0.65) (0.65)... See More ⇒
Detailed specifications: UNR5119 , UNR511D , UNR511E , UNR511F , UNR511H , UNR511L , UNR511M , UNR511N , TIP31C , UNR511V , UNR511Z , UN5110 , UN5111 , UN5112 , UN5113 , UN5114 , UN5115 .
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History: 2SC287 | 2SC2868Y
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