3CD9A Specs and Replacement
Type Designator: 3CD9A
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 180
Package: TO-3
3CD9A Substitution
- BJT ⓘ Cross-Reference Search
3CD9A datasheet
INCHANGE Semiconductor isc Silicon PNP Power Transistors 3CD9A DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
Detailed specifications: 2N3772J , 2NC5566 , 2SA1012D , 2SC5200H , 2SD1286-Z , 2SD1804L-T , 2SD2901 , 2ST501T , D880 , 3CD9B , 3CD9C , 3CD9D , 3CD9F , 3CF20D , 3DA98 , 3DA98J , 3DD100A .
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