2SA1128 PDF and Equivalents Search

 

2SA1128 Specs and Replacement

Type Designator: 2SA1128

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO92

 2SA1128 Substitution

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2SA1128 datasheet

 ..1. Size:36K  panasonic

2sa1128.pdf pdf_icon

2SA1128

Transistor 2SA1128 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converter circuits. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 25 V 0.45 0.1 0.45 0.1... See More ⇒

 ..2. Size:40K  panasonic

2sa1128 e.pdf pdf_icon

2SA1128

Transistor 2SA1128 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converter circuits. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 25 V 0.45 0.1 0.45 0.1... See More ⇒

 8.1. Size:86K  renesas

r07ds0271ej 2sa1121-1.pdf pdf_icon

2SA1128

Preliminary Datasheet R07DS0271EJ0300 2SA1121 (Previous REJ03G0636-0200) Rev.3.00 Silicon PNP Epitaxial Mar 28, 2011 Application Low frequency amplifier Complementary pair with 2SC2618 Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 1. Emitter 3 2. Base 3. Collector 1 2 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collec... See More ⇒

 8.2. Size:103K  nec

2sa1129.pdf pdf_icon

2SA1128

DATA SHEET SILICON POWER TRANSISTOR 2SA1129 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SA1129 is a mold power transistor developed for mid-speed ORDERING INFORMATION switching, and is ideal for use as a ramp driver. Part No. Package 2SA1129 TO-220AB FEATURES Large current capacity with small package IC(DC) = -7.0 A (TO-220AB)... See More ⇒

Detailed specifications: 2SA1122C, 2SA1122D, 2SA1122E, 2SA1123, 2SA1124, 2SA1125, 2SA1126, 2SA1127, BC546, 2SA1129, 2SA113, 2SA1133, 2SA1133A, 2SA1135, 2SA1136, 2SA1137, 2SA1138

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