2SA1129 Datasheet and Replacement

DATA SHEETSILICON POWER TRANSISTOR2SA1129PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SA1129 is a mold power transistor developed for mid-speed ORDERING INFORMATIONswitching, and is ideal for use as a ramp driver.Part No. Package2SA1129 TO-220ABFEATURES Large current capacity with small package: IC(DC) = -7.0 A(TO-220AB)

JMnic Product Specification Silicon PNP Power Transistors 2SA1129 DESCRIPTION With TO-220 package Low collector saturation voltage Large current capacity Complement to type 2SC2654 APPLICATIONS For low-frequency power amplifiers and mid-speed switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified

2SA1129(3CA1129) PNP /SILICON PNP TRANSISTOR : Purpose: For low-frequency power amplifiers and mid-speed switching. , 2SC2654(3DA2654) Features: Large current capacity with small package, low collector saturation voltage, pair with 2SC2654(3DA2654). /Absolute

isc Silicon PNP Power Transistor 2SA1129DESCRIPTIONLow Collector Saturation Voltage:V = -0.3(V)(Max)@I = -3ACE(sat) CLarge Current Capability-I = -7ACComplement to Type 2SC2654Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for mid-switching applications, and is ideal foruse as a ramp driver.ABSOLUTE MAXIM

Preliminary Datasheet R07DS0271EJ03002SA1121 (Previous: REJ03G0636-0200)Rev.3.00Silicon PNP Epitaxial Mar 28, 2011Application Low frequency amplifier Complementary pair with 2SC2618 Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)1. Emitter32. Base3. Collector12Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollec

Transistor2SA1124Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SC26325.9 0.2 4.9 0.2FeaturesSatisfactory foward current transfer ratio hFE collector current ICcharacteristics.High collector to emitter voltage VCEO.0.7 0.1Small collector output capacitance Cob.Makes up a complementary pair with 2SC

Transistor2SA1128Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Optimum for low-voltage operation and for converter circuits.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 25 V0.45 0.1 0.45 0.1

Transistor2SA1128Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Optimum for low-voltage operation and for converter circuits.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 25 V0.45 0.1 0.45 0.1

Transistor2SA1123Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SC26315.0 0.2 4.0 0.2FeaturesSatisfactory foward current transfer ratio hFE collector current ICcharacteristics.High collector to emitter voltage VCEO.Small collector output capacitance Cob.Makes up a complementary pair with 2SC2631, which

Transistor2SA1127Silicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SC26345.0 0.2 4.0 0.2FeaturesLow noise characteristics.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 60 V0.45 0.1 0.45 0.1Collector to e

Transistor2SA1123Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SC26315.0 0.2 4.0 0.2FeaturesSatisfactory foward current transfer ratio hFE collector current ICcharacteristics.High collector to emitter voltage VCEO.Small collector output capacitance Cob.Makes up a complementary pair with 2SC2631, which

Transistor2SA1124Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SC26325.9 0.2 4.9 0.2FeaturesSatisfactory foward current transfer ratio hFE collector current ICcharacteristics.High collector to emitter voltage VCEO.0.7 0.1Small collector output capacitance Cob.Makes up a complementary pair with 2SC

Transistor2SA1127Silicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SC26345.0 0.2 4.0 0.2FeaturesLow noise characteristics.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 60 V0.45 0.1 0.45 0.1Collector to e

2SA1122Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SA1122Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 55 VEmitter to base voltage VEBO 5 VCollector current IC 100 mACollector power dissipation PC 150 mWJu

2SA1121Silicon PNP EpitaxialApplication Low frequency amplifier Complementary pair with 2SC2618OutlineMPAK311. Emitter2. Base23. Collector2SA1121Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 35 VCollector to emitter voltage VCEO 35 VEmitter to base voltage VEBO 4 VCollector current IC 500 mA

JMnic Product Specification Silicon PNP Power Transistors 2SA1120 DESCRIPTION With TO-126 package High transition frequency Low collector saturation voltage APPLICATIONS Audio power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNI

JMnic Product Specification Silicon PNP Power Transistors 2SA1125 DESCRIPTION With TO-220 package Complement to type 2SC2633 High breakdown voltage APPLICATIONS For audio frequency high voltage amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximu

SMD Type orSMD Type TransistICsPNP Transistors2SA1122SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1Features3Low frequency amplifier1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO -55 VCollector to emitter voltage VCEO -55 VEmitter to base vol

SMD Type orSMD Type TransistICsPNP Transistors2SA1121SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13Features Low frequency amplifier Complementary pair with 2SC26181 2+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO -35 VCollector to emitter

isc Silicon PNP Power Transistor 2SA1120DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -20V (Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.0V(Max.)@ I = 0.1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobo flash applicationsAudio power amplifer applicationsABSOLUTE MAXIMUM RATINGS(Ta=25

isc Silicon PNP Power Transistor 2SA1125DESCRIPTIONLow Collector Saturation VoltageLarge Current CapabilityComplement to Type 2SC2633Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency high voltageamplifier applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector