2SA113 Datasheet and Replacement
Type Designator: 2SA113
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 34 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 45
Noise Figure, dB: -
Package: TO44
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2SA113 Datasheet (PDF)
2sa1135.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1135 DESCRIPTION With TO-3PN package Complement to type 2SC2665 APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALU
2sa1133 2sa1133a.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1133 2SA1133A DESCRIPTION With TO-220 package High breakdown voltage High power dissipation Complement to type 2SC2660/2660A APPLICATIONS For power amplifier and TV vertical deflection output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified
2sa1133.pdf

isc Silicon PNP Power Transistor 2SA1133DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V (Min)(BR)CEOLarge Collector Power DissipationComplement to Type 2SC2660Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and TV vertical deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(Ta
Datasheet: 2SA1122E , 2SA1123 , 2SA1124 , 2SA1125 , 2SA1126 , 2SA1127 , 2SA1128 , 2SA1129 , 9014 , 2SA1133 , 2SA1133A , 2SA1135 , 2SA1136 , 2SA1137 , 2SA1138 , 2SA114 , 2SA1141 .
History: 2N5535 | KSC1675 | 2N3917
Keywords - 2SA113 transistor datasheet
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History: 2N5535 | KSC1675 | 2N3917



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