2SA113 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA113
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 34 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 45
Noise Figure, dB: -
Package: TO44
2SA113 Transistor Equivalent Substitute - Cross-Reference Search
2SA113 Datasheet (PDF)
2sa1135.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1135 DESCRIPTION With TO-3PN package Complement to type 2SC2665 APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALU
2sa1133 2sa1133a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1133 2SA1133A DESCRIPTION With TO-220 package High breakdown voltage High power dissipation Complement to type 2SC2660/2660A APPLICATIONS For power amplifier and TV vertical deflection output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified
2sa1133.pdf
isc Silicon PNP Power Transistor 2SA1133DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V (Min)(BR)CEOLarge Collector Power DissipationComplement to Type 2SC2660Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and TV vertical deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(Ta
2sa1135.pdf
isc Silicon PNP Power Transistor 2SA1135DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2665Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll
2sa1133 2sa1133a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1133 2SA1133A DESCRIPTION With TO-220 package High breakdown voltage High power dissipation Complement to type 2SC2660/2660A APPLICATIONS For power amplifier and TV vertical deflection output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base
2sa1133a.pdf
isc Silicon PNP Power Transistor 2SA1133ADESCRIPTIONCollector-Emitter Breakdown Voltage-V = -180V (Min)(BR)CEOLarge Collector Power DissipationComplement to Type 2SC2660AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and TV vertical deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(
Datasheet: 2SA1122E , 2SA1123 , 2SA1124 , 2SA1125 , 2SA1126 , 2SA1127 , 2SA1128 , 2SA1129 , 13005 , 2SA1133 , 2SA1133A , 2SA1135 , 2SA1136 , 2SA1137 , 2SA1138 , 2SA114 , 2SA1141 .
History: D29J9 | SRA2204M | TN2905A | 2SB975-220 | 2SB823 | CL855C | 2SB1293
History: D29J9 | SRA2204M | TN2905A | 2SB975-220 | 2SB823 | CL855C | 2SB1293
LIST
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BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D