2SA113 Specs and Replacement
Type Designator: 2SA113
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 34 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 45
Package: TO44
2SA113 Substitution
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2SA113 datasheet
JMnic Product Specification Silicon PNP Power Transistors 2SA1135 DESCRIPTION With TO-3PN package Complement to type 2SC2665 APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALU... See More ⇒
JMnic Product Specification Silicon PNP Power Transistors 2SA1133 2SA1133A DESCRIPTION With TO-220 package High breakdown voltage High power dissipation Complement to type 2SC2660/2660A APPLICATIONS For power amplifier and TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified... See More ⇒
isc Silicon PNP Power Transistor 2SA1133 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Large Collector Power Dissipation Complement to Type 2SC2660 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta... See More ⇒
Detailed specifications: 2SA1122E, 2SA1123, 2SA1124, 2SA1125, 2SA1126, 2SA1127, 2SA1128, 2SA1129, BD135, 2SA1133, 2SA1133A, 2SA1135, 2SA1136, 2SA1137, 2SA1138, 2SA114, 2SA1141
Keywords - 2SA113 pdf specs
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