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3DF1F Specs and Replacement


   Type Designator: 3DF1F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 450 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO-66

 3DF1F Transistor Equivalent Substitute - Cross-Reference Search

   

3DF1F detailed specifications

 ..1. Size:185K  inchange semiconductor
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3DF1F

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DF1F DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE M... See More ⇒

Detailed specifications: 3DD523 , 3DD880 , 3DD880X , 3DF1A , 3DF1B , 3DF1C , 3DF1D , 3DF1E , S8050 , 3DF20A , 3DF20B , 3DF20C , 3DF20D , 3DF20E , 3DF20F , 3DK104B , 3DK104C .

History: 2SD2478

Keywords - 3DF1F transistor specs

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