3DF1F Datasheet. Specs and Replacement
Type Designator: 3DF1F 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO-66
3DF1F Substitution
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3DF1F datasheet
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DF1F DESCRIPTION With TO-66 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE M... See More ⇒
Detailed specifications: 3DD523, 3DD880, 3DD880X, 3DF1A, 3DF1B, 3DF1C, 3DF1D, 3DF1E, S8050, 3DF20A, 3DF20B, 3DF20C, 3DF20D, 3DF20E, 3DF20F, 3DK104B, 3DK104C
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