All Transistors. 3DK104E Datasheet

 

3DK104E Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DK104E

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO-3

3DK104E Transistor Equivalent Substitute - Cross-Reference Search

 

3DK104E Datasheet (PDF)

1.1. 3dk104e.pdf Size:183K _inchange_semiconductor

3DK104E
3DK104E

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DK104E DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE

4.1. 3dk104c.pdf Size:183K _inchange_semiconductor

3DK104E
3DK104E

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DK104C DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE

4.2. 3dk104d.pdf Size:204K _inchange_semiconductor

3DK104E
3DK104E

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DK104D DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE

 4.3. 3dk104f.pdf Size:183K _inchange_semiconductor

3DK104E
3DK104E

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DK104F DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE

4.4. 3dk104b.pdf Size:183K _inchange_semiconductor

3DK104E
3DK104E

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DK104B DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE

 4.5. 3dk104h.pdf Size:169K _china

3DK104E

3DK104H 型 NPN 硅小功率开关晶体管 参数符号 测试条件 规范值 单位 PCM TC=25℃ 700 mW 极 ICM 400 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥100 V V(BR)CEO ICE=0.1mA ≥60 V V(BR)EBO IEB=0.1mA ≥5 V ICBO VCB=10V ≤0.1 μA 直 ICEO VCE=10V ≤0.1 μA 流 参 IEBO VEB=4V ≤0.1 μA 数 VBEsat ≤0.9 IC=30mA V IB=3mA

4.6. 3dk104.pdf Size:32K _china

3DK104E

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DK104, 3DK105 NPN Silicon High Frequency Moddle Power Switch Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation and high frequency switch, high frequency sma

Datasheet: T2393 , T2415 , T2417 , T2418 , T2448 , T2452 , T2453 , T2454 , 8050 , T2469 , T2470 , T2471 , T2472 , T2478 , T2479 , T2490 , T2491 .

 

 
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