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BU458 Specs and Replacement


   Type Designator: BU458
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.25 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO-126

 BU458 Transistor Equivalent Substitute - Cross-Reference Search

   

BU458 detailed specifications

 ..1. Size:207K  inchange semiconductor
 bu457 bu458 bu459.pdf pdf_icon

BU458

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BF457/458/459 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min)- BF457 CEO(BR) 250V(Min)- BF458 300V(Min)- BF459 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Intended for video output stages in colour and black And white TV receive... See More ⇒

Detailed specifications: 3DK104F , A0718 , BD912I , BFP420W , BU304F , BU305F , BU415 , BU457 , S9014 , BU459 , BUF405AF , BUL1203E , FJL6820 , KT8232A , KT8232B , MJB32B , UPA801TC-FB .

History: TP5141 | IT132 | IMD1A

Keywords - BU458 transistor specs

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