2SC4850 Specs and Replacement

Type Designator: 2SC4850

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO3P

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2SC4850 datasheet

 ..2. Size:186K  inchange semiconductor

2sc4850.pdf pdf_icon

2SC4850

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4850 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications A... See More ⇒

 8.2. Size:55K  sanyo

2sc4853a.pdf pdf_icon

2SC4850

Ordering number ENA1076 2SC4853A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor Low-Voltage, Low-Current 2SC4853A High-Frequency Amplifier Applications Features Low-voltage, low-current operation fT=5GHz typ. (VCE=1V, IC=1mA) S21e 2=7dB typ (f=1GHz). NF=2.6dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol ... See More ⇒

Detailed specifications: 2SC3353A, 2SC4538R, 2SC4573, 2SC4574, 2SC4652, 2SC4799, 2SC4847, 2SC4848, 2SB817, 2SC5128, 2SC5696, 2SC5887, 2SCR586D3, 2SD1047E, 2SD133, 2SD1885C, 2SD2328

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