All Transistors. TIP3055T Datasheet

 

TIP3055T Datasheet, Equivalent, Cross Reference Search

Type Designator: TIP3055T

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 75 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO220

TIP3055T Transistor Equivalent Substitute - Cross-Reference Search

 

TIP3055T Datasheet (PDF)

0.1. tip3055t.pdf Size:214K _inchange_semiconductor

TIP3055T
TIP3055T

isc Silicon NPN Power Transistor TIP3055T DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : h =20-70@I = 4A FE C ·Collector-Emitter Saturation Voltage- : V )= 0.8V(Max)@ I = 4A CE(sat C ·Complement to Type TIP2955T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier

7.1. tip3055r.pdf Size:104K _motorola

TIP3055T
TIP3055T

Order this document MOTOROLA by TIP3055/D SEMICONDUCTOR TECHNICAL DATA NPN TIP3055 Complementary Silicon Power PNP TIP2955 Transistors . . . designed for general purpose switching and ampli

7.2. tip2955 tip3055.pdf Size:87K _st

TIP3055T
TIP3055T

TIP2955 TIP3055 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier 3 2 1 Description TO-247 The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Figure 1. Internal sche

 7.3. tip3055 tip2955.pdf Size:61K _onsemi

TIP3055T
TIP3055T

TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general-purpose switching and amplifier applications. http://onsemi.com Features • DC Current Gain - 15 AMPERE hFE = 20 - 70 @ IC POWER TRANSISTORS = 4.0 Adc COMPLEMENTARY SILICON • Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTS VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc • Excell

7.4. tip3055.pdf Size:82K _bourns

TIP3055T
TIP3055T

TIP3055 NPN SILICON POWER TRANSISTOR ● Designed for Complementary Use with the SOT-93 PACKAGE TIP2955 Series (TOP VIEW) ● 90 W at 25°C Case Temperature B 1 ● 15 A Continuous Collector Current C 2 ● Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwis

 7.5. tip2955 tip3055.pdf Size:107K _mospec

TIP3055T
TIP3055T

A A A

7.6. tip2955f tip3055f.pdf Size:290K _cdil

TIP3055T
TIP3055T

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP2955F PNP TIP3055F NPN TO- 3P Fully Isolated Plastic Package B C E Designed for General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO 60 V Collector-Emitter Voltage VCER 70 V Collector-

7.7. tip3055.pdf Size:142K _inchange_semiconductor

TIP3055T
TIP3055T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP3055 DESCRIPTION ·With TO-3PN package ·Complement to type TIP2955 ·90 W at 25°C case temperature ·15 A continuous collector current APPLICATIONS ·Designed for general–purpose switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base

Datasheet: 2SC628 , 2SC629 , 2SC63 , 2SC631 , 2SC631A , 2SC631AS , 2SC632 , 2SC632A , BC547C , 2SC633A , 2SC634 , 2SC634A , 2SC635 , 2SC636 , 2SC637 , 2SC638 , 2SC639 .

 

 
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