2SA1145Y Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1145Y
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO92
2SA1145Y Transistor Equivalent Substitute - Cross-Reference Search
2SA1145Y Datasheet (PDF)
2sa1145.pdf
2SA1145 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC2705. Small Collector Output Capacitance: Cob = 2.5 pF (typ.) High Transition Frequency: fT = 200 MHz (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -150 VColl
2sa1145.pdf
2SA1145 TO-92MOD Transistor (PNP)1. EMITTER TO-92MOD1 2. COLLECTOR 2 3 3. BASE Features5.8006.200 Complementary to 2SC2705 Small collector output capacitance: Cob=2.5pF(Typ.) 8.4008.800 High transition frequency: fT=200MHz(Typ.) 0.9001.1000.400MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.60013.800Symbol Parameter Value Units14.200VCBO
2sa1145.pdf
isc Silicon PNP Power Transistor 2SA1145DESCRIPTIONLow collector output capacitanceHigh frequencyComplement to 2SC2705Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency amplifier applicationABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -150 VCBOV Collector-Emitte
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
