MJE15037 Specs and Replacement
Type Designator: MJE15037
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 3000
Noise Figure, dB: -
Package: TO-220
- BJT ⓘ Cross-Reference Search
MJE15037 datasheet
..1. Size:977K 1
mje15037.pdf 
MJE15037 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220 PNP Silicon PNP transistor in a TO-220 Plastic Package. / Features - MJE15036 High DC current gain, High VCEO, High fT, Complementary pair with MJE15036. / Appli... See More ⇒
..2. Size:203K inchange semiconductor
mje15037.pdf
isc Silicon PNP Power Transistor MJE15037 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -250V(Min) CEO(SUS) DC current gain - h = 5000 (Min) @I = -0.5 A FE C h = 3000 (Min) @I = -2.0 A FE C Complement to Type MJE15036 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as high frequency drivers ... See More ⇒
7.1. Size:1008K 1
mje15036.pdf
MJE15036 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features - MJE15037 High DC current gain, High VCEO, High fT, Complementary pair with MJE15037. / Appli... See More ⇒
7.2. Size:141K motorola
mje15032.pdf
Order this document MOTOROLA by MJE15032/D SEMICONDUCTOR TECHNICAL DATA NPN * MJE15032 Complementary Silicon Plastic PNP Power Transistors * MJE15033 . . . designed for use as high frequency drivers in audio amplifiers. DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc *Motorola Preferred Device hFE = 10 (Min) @ IC = 2.0 Adc Collector Emitter Su... See More ⇒
7.3. Size:139K onsemi
mje15034g.pdf
MJE15034 NPN, MJE15035 PNP Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP Devices http //onsemi.com Complementary silicon plastic power transistors are designed for 4.0 AMPERES use as high-frequency drivers in audio amplifiers. POWER TRANSISTORS Features COMPLEMENTARY SILICON hFE = 100 (Min) @ IC = 0.5 Adc 350 VOLTS, 50 WATTS = 10 (Min) @ IC = 2.0 Adc C... See More ⇒
7.4. Size:178K onsemi
mje15030g.pdf
MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features 8 AMPERE DC Current Gain Specified to 4.0 A POWER TRANSISTORS hFE = 40 (Min) @ IC = 3.0 Adc COMPLEMENTARY SILICON = 20 (Min) @ IC = 4.0 Adc 120-150 VOLTS, 50 WATTS Coll... See More ⇒
7.5. Size:223K onsemi
mje15028 mje15030 mje15029 mje15031.pdf
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features 8 AMPERE High Current Gain - Bandwidth Product POWER TRANSISTORS TO-220 Compact Package COMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant* 120-... See More ⇒
7.6. Size:64K onsemi
mje15034-35.pdf
MJE15034 NPN, MJE15035 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP Devices http //onsemi.com . . . designed for use as high-frequency drivers in audio amplifiers. hFE = 100 (Min) @ IC = 0.5 Adc 4.0 AMPERES = 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS Collector-Emitter Sustaining Voltage - VCEO(sus) = 350 Vdc (Min) - MJE15034, MJE150... See More ⇒
7.7. Size:89K onsemi
mje15032-33.pdf
ON Semiconductort NPN Complementary Silicon Plastic * MJE15032 Power Transistors PNP . . . designed for use as high frequency drivers in audio amplifiers. * MJE15033 DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC = 0.5 Adc = 10 (Min) @ IC = 2.0 Adc *ON Semiconductor Preferred Device Collector Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) M... See More ⇒
7.8. Size:166K onsemi
mje15033g.pdf
MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features DC Current Gain Specified to 5.0 Amperes hFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES = 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 250 Vd... See More ⇒
7.9. Size:178K onsemi
mje15031g.pdf
MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features 8 AMPERE DC Current Gain Specified to 4.0 A POWER TRANSISTORS hFE = 40 (Min) @ IC = 3.0 Adc COMPLEMENTARY SILICON = 20 (Min) @ IC = 4.0 Adc 120-150 VOLTS, 50 WATTS Coll... See More ⇒
7.10. Size:72K onsemi
mje15034 mje15035.pdf
MJE15034 (NPN), MJE15035 (PNP) Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP Devices www.onsemi.com Complementary silicon plastic power transistors are designed for 4.0 AMPERES use as high-frequency drivers in audio amplifiers. POWER TRANSISTORS Features COMPLEMENTARY SILICON High Current Gain - Bandwidth Product 350 VOLTS, 50 WATTS TO-220 Compact Packa... See More ⇒
7.11. Size:75K onsemi
mje15032 mje15033.pdf
MJE15032 (NPN), MJE15033 (PNP) Preferred Devices Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features DC Current Gain Specified to 5.0 Amperes 8.0 AMPERES hFE = 70 (Min) @ IC = 0.5 Adc POWER TRANSISTORS = 10 (Min) @ IC = 2.0 Adc COMPLEMENTARY SILICON Collector-Emitter Sustaining Voltage -... See More ⇒
7.12. Size:139K onsemi
mje15035g.pdf
MJE15034 NPN, MJE15035 PNP Complementary Silicon Plastic Power Transistors TO-220, NPN & PNP Devices http //onsemi.com Complementary silicon plastic power transistors are designed for 4.0 AMPERES use as high-frequency drivers in audio amplifiers. POWER TRANSISTORS Features COMPLEMENTARY SILICON hFE = 100 (Min) @ IC = 0.5 Adc 350 VOLTS, 50 WATTS = 10 (Min) @ IC = 2.0 Adc C... See More ⇒
7.13. Size:166K onsemi
mje15032g.pdf
MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as high-frequency drivers in audio amplifiers. http //onsemi.com Features DC Current Gain Specified to 5.0 Amperes hFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES = 10 (Min) @ IC = 2.0 Adc POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 250 Vd... See More ⇒
7.14. Size:280K cdil
mje15032 33.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL POWER TRANSISTORS MJE15032 NPN MJE15033 PNP TO - 220 Plastic Package High - Frequency Drivers in Audio Amplifier ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector- Base Voltage VCBO 250 V Collector- Emitter Voltage VCEO 250 V 5 Emitter- Base Voltage VEBO V 8 ... See More ⇒
7.16. Size:172K cn sptech
mje15031.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJE15031 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = 0.5A T C DC current gain - h = 40 (Min) @I = 3.0 A FE C h = 20 (Min) @I = 4.0 A FE C Complement to Type MJE15030 APPLICATIONS Designed for use as high freque... See More ⇒
7.17. Size:172K cn sptech
mje15032.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor MJE15032 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) DC current gain - h = 50 (Min) @I = 0.5 A FE C h = 10 (Min) @I = 2.0 A FE C Complement to Type MJE15033 APPLICATIONS Designed for use as high frequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) S... See More ⇒
7.18. Size:172K cn sptech
mje15033.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor MJE15033 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -250V(Min) CEO(SUS) DC current gain - h = 50 (Min) @I = -0.5 A FE C h = 10 (Min) @I = -2.0 A FE C Complement to Type MJE15032 APPLICATIONS Designed for use as high frequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS (Ta=25 )... See More ⇒
7.19. Size:173K cn sptech
mje15030.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor MJE15030 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = 0.5A T C DC current gain - h = 40 (Min) @I = 3.0 A FE C h = 20 (Min) @I = 4.0 A FE C Complement to Type MJE15031 APPLICATIONS Designed for use as high freque... See More ⇒
7.20. Size:213K inchange semiconductor
mje15031.pdf
isc Silicon PNP Power Transistor MJE15031 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = 0.5A T C DC current gain - h = 40 (Min) @I = 3.0 A FE C h = 20 (Min) @I = 4.0 A FE C Complement to Type MJE15030 Minimum Lot-to-Lot variations for robust device performance and reliable operat... See More ⇒
7.21. Size:132K inchange semiconductor
mje15032.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE15032 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 250V(Min) DC current gain - hFE = 50 (Min) @IC= 0.5 A hFE = 10 (Min) @IC= 2.0 A Complement to Type MJE15033 APPLICATIONS Designed for use as high frequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RA... See More ⇒
7.22. Size:213K inchange semiconductor
mje15033.pdf
isc Silicon PNP Power Transistor MJE15033 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -250V(Min) CEO(SUS) DC current gain - h = 50 (Min) @I = -0.5 A FE C h = 10 (Min) @I = -2.0 A FE C Complement to Type MJE15032 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as high frequency drivers in a... See More ⇒
7.23. Size:218K inchange semiconductor
mje15036.pdf
isc Silicon NPN Power Transistor MJE15036 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) DC current gain - h = 5000 (Min) @I = 0.5 A FE C h = 3000 (Min) @I = 2.0 A FE C Complement to Type MJE15037 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as high frequency drivers in ... See More ⇒
7.24. Size:211K inchange semiconductor
mje15030.pdf
isc Silicon NPN Power Transistor MJE15030 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) High Current Gain-Bandwidth Product- f = 30MHz(Min)@ I = 0.5A T C DC current gain - h = 40 (Min) @I = 3.0 A FE C h = 20 (Min) @I = 4.0 A FE C Complement to Type MJE15031 Minimum Lot-to-Lot variations for robust device performance and reliable operat... See More ⇒
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