ST2310HI Datasheet and Replacement

ST2310HIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY ( > 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS3APPLICATIONS: 2 HORIZONTAL DEFLECTION FOR1MONITORS 15" AND HIGH END TVSISOWATT218DESCRIPTION The device is manu

ST2310DHIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS: 1 HORIZONTAL DEFLECTION HIGH END TVSISOWATT218DESCRIPTION The devi

ST2310DHIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS: 1 HORIZONTAL DEFLECTION HIGH END TVSISOWATT218DESCRIPTION The devi

ST2317S23RG P Channel Enhancement Mode MOSFET -5.0A DESCRIPTION ST2317S23RG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and

ST2318SRG N Channel Enhancement Mode MOSFET 3.9A DESCRIPTION ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and noteb

ST2319SRG P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and not

WST2315 P-Ch MOSFETGeneral Description Product SummeryThe WST2315 is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density,which provide excellent RDSON -4.4A-20V 50mand gate charge for most of the synchronous buck converter applications . Applications The WST2315 meet the RoHS and Green Product requirement,with full High Frequ

WST2314N-Channel MOSFETGeneral Description Product SummeryThe WST2314 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 26m 5.5Afor most of the small power switching and load switch applications. Applications The WST2314 meet the RoHS and Green Product requirement with full f

WST2316AN-Channel MOSFETGeneral Description Product SummeryThe WST2316A is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 26m 5.5Agate charge for most of the small power switching and load switch applications. Applications The WST2316A meet the RoHS and Green Product requirement with ful

WST2319P-Ch MOSFETProduct SummeryGeneral Description The WST2319 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density ,which provide excellent RDSON and gate charge-40V 35m -6Afor most of the synchronous buck converterapplications .Applications The WST2319 meet the RoHS and Green Product High Frequency Point-of-Load Synchronou

ST2315S23Rwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-