2SA1152 Datasheet and Replacement
Type Designator: 2SA1152
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO92
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2SA1152 Datasheet (PDF)
2sa1150.pdf

2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 Low Frequency Amplifier Applications Unit: mm High hFE: h = 100~320 FE Complementary to 2SC2710. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO -5 VCollector current I
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC4172L | 2SC3182NO | BUX84 | 2SC1978 | 2SA1296 | D28A12 | CL151-4B
Keywords - 2SA1152 transistor datasheet
2SA1152 cross reference
2SA1152 equivalent finder
2SA1152 lookup
2SA1152 substitution
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History: 2SC4172L | 2SC3182NO | BUX84 | 2SC1978 | 2SA1296 | D28A12 | CL151-4B



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