2SA1154 PDF and Equivalents Search

 

2SA1154 Specs and Replacement

Type Designator: 2SA1154

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO92

 2SA1154 Substitution

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2SA1154 datasheet

 8.1. Size:193K  toshiba

 2sa1150.pdf pdf_icon

2SA1154

2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 Low Frequency Amplifier Applications Unit mm High hFE h = 100 320 FE Complementary to 2SC2710. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current I... See More ⇒

 8.2. Size:166K  nec

 2sa1156.pdf pdf_icon

2SA1154

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 8.3. Size:24K  nec

 2sa1153.pdf pdf_icon

2SA1154

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Detailed specifications: 2SA1147, 2SA115, 2SA1150, 2SA1150O, 2SA1150Y, 2SA1151, 2SA1152, 2SA1153, NJW0281G, 2SA1155, 2SA1156, 2SA1158, 2SA116, 2SA1160, 2SA1160A, 2SA1160B, 2SA1160C

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