ISCN366P PDF and Equivalents Search

 

ISCN366P Specs and Replacement

Type Designator: ISCN366P

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO220

 ISCN366P Substitution

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ISCN366P datasheet

 ..1. Size:251K  inchange semiconductor

 iscn366p.pdf pdf_icon

ISCN366P

isc Silicon NPN Power Transistor ISCN366P DESCRIPTION DC Current Gain- h = 20-60@I = 0.5A FE C Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a ... See More ⇒

 9.1. Size:252K  inchange semiconductor

 iscn372n.pdf pdf_icon

ISCN366P

isc Silicon NPN Power Transistor ISCN372N DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

 9.2. Size:260K  inchange semiconductor

 iscn341n.pdf pdf_icon

ISCN366P

isc Silicon NPN Power Transistors ISCN341N DESCRIPTION Collector-Emitter Sustaining Voltage V = 450V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 720 V CBO V Collector-Emitter Voltage 450 V CEO ... See More ⇒

 9.3. Size:228K  inchange semiconductor

 iscn372m.pdf pdf_icon

ISCN366P

isc Silicon NPN Power Transistor ISCN372M DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

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Detailed specifications: ISCP233N , KSE340J , KSE350J , KSH13005 , 2SC3866A , 3DK501D , 3DA77 , 3DF5B , 13003 , ISCN372M , ISCN372N , SSCP005GSB , SJT13009NT , 2N5401B , 2N5401B-Y1 , 2N5401B-Y2 , 2N5551A .

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