All Transistors. C1815BF-Y Datasheet

 

C1815BF-Y Datasheet, Equivalent, Cross Reference Search


   Type Designator: C1815BF-Y
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 5.5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO92

 C1815BF-Y Transistor Equivalent Substitute - Cross-Reference Search

   

C1815BF-Y Datasheet (PDF)

 7.1. Size:467K  feihonltd
c1815bf.pdf

C1815BF-Y
C1815BF-Y

TRANSISTOR C1815BF MAIN CHARACTERISTICS FEATURES IC 100mA Epitaxial silicon VCEO 55V High switching speed VCBO 70V 2SA1015 Complementary to 2SA1015 PC 400mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier

 8.1. Size:774K  slkor
2sc1815o 2sc1815q 2sc1815gr 2sc1815bl.pdf

C1815BF-Y
C1815BF-Y

2SC1815 Equivalent Circuit Collector-Base Voltage 60 V Collector-Emitter Voltage 50 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.15 A Collector Power D

 9.1. Size:50K  philips
2pc1815.pdf

C1815BF-Y
C1815BF-Y

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862PC1815NPN general purpose transistorProduct specification 2004 Nov 05Supersedes data of 1999 May 28Philips Semiconductors Product specificationNPN general purpose transistor 2PC1815FEATURES PINNING Low current (max. 150 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 base2 collectorAPPLICATIONS3 emitter

 9.2. Size:47K  philips
2pc1815 3.pdf

C1815BF-Y
C1815BF-Y

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862PC1815NPN general purpose transistor1999 May 28Product specificationSupersedes data of 1997 Mar 28Philips Semiconductors Product specificationNPN general purpose transistor 2PC1815FEATURES PINNING Low current (max. 150 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 base2 collectorAPPLICATIONS3 emitter

 9.3. Size:213K  toshiba
2sc1815-t.pdf

C1815BF-Y
C1815BF-Y

 9.4. Size:272K  toshiba
2sc1815.pdf

C1815BF-Y
C1815BF-Y

2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit: mmDriver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

 9.5. Size:272K  toshiba
2sc1815-o 2sc1815-y 2sc1815-gr 2sc1815-bl.pdf

C1815BF-Y
C1815BF-Y

2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit: mmDriver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

 9.6. Size:308K  toshiba
2sc1815l.pdf

C1815BF-Y
C1815BF-Y

2SC1815(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Unit: mm Low Noise Amplifier Applications High breakdown voltage, high current capability : V = 50 V (min), I = 150 mA (max) CEO C Excellent linearity of h FE: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : h (I = 0.1 mA)/h (I = 2 mA)

 9.7. Size:44K  fairchild semi
ksc1815.pdf

C1815BF-Y
C1815BF-Y

KSC1815Audio Frequency Amplifier & High Frequency OSC Complement to KSA1015 Collector-Base Voltage : VCBO= 50VTO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 VIC

 9.8. Size:368K  mcc
2sc1815-bl-gr-o-y.pdf

C1815BF-Y
C1815BF-Y

2SC1815-OMCC2SC1815-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC1815-GRCA 91311Phone: (818) 701-49332SC1815-BLFax: (818) 701-4939Features 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF NPN SiliconAmplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.Epitaxial

 9.9. Size:257K  onsemi
ksc1815.pdf

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C1815BF-Y

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.10. Size:235K  utc
2sc1815.pdf

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C1815BF-Y

UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BV =50V CEO* Collector current up to 150mA * High h linearity FE* Complimentary to UTC 2SA1015 SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen

 9.11. Size:393K  secos
c1815t.pdf

C1815BF-Y
C1815BF-Y

C1815T 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation EmitterCLASSIFICATION OF hFE (1) J CollectorBase A DProduct-Rank C1815T-O C1815T-Y C1815T-GRMillimeterREF. BMin. Max.Range 70~140 120~240 200~400A 4.40

 9.12. Size:174K  secos
c1815.pdf

C1815BF-Y
C1815BF-Y

C1815 200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE ALPower Dissipation 33Top View C B11 22K ECollector MARKING: HF 3 DH JF G1 Base Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.04 G - 0.18 2 B

 9.13. Size:247K  cdil
csc1815.pdf

C1815BF-Y
C1815BF-Y

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC1815TO-92Plastic PackageBCEAudio Frequency General Purpose and Driver Stage Amplifier Applications.Complementary CSA1015ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage

 9.14. Size:186K  jiangsu
2sc1815.pdf

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C1815BF-Y

2S Equivalent Circuit

 9.15. Size:1579K  jiangsu
c1815.pdf

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C1815BF-Y

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encap sulate Transistors *SOT-23 C1815 TRANSI STOR (NPN) FEATURES 1. BASE Power dissipation 2. EMITTER 3. COLLECTOR MARKING : HF MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOVCEO Collector-Emitt

 9.16. Size:803K  kec
ktc1815.pdf

C1815BF-Y
C1815BF-Y

SEMICONDUCTOR KTC1815TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.FEATURESExcellent hFE Linearity: hFE(2)=100(Typ.) at VCE=6V, IC=150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).Low Noise : NF=1dB(Typ.). at f=1kHz.Complementary to KTA1015. MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base

 9.17. Size:168K  microelectronics
2sc1815-m.pdf

C1815BF-Y
C1815BF-Y

 9.18. Size:1213K  htsemi
2sc1815.pdf

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C1815BF-Y

2SC1815TRANSISTOR (NPN) SOT-23 FEATURES Power dissipation MARKING : 2SC1815=HF 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW

 9.19. Size:830K  htsemi
c1815.pdf

C1815BF-Y
C1815BF-Y

C1815TRANSISTOR (NPN) SOT-23 FEATURES Power dissipation 1. BASE MARKING : C1815=HF 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW Tj

 9.20. Size:1131K  lge
2sc1815.pdf

C1815BF-Y
C1815BF-Y

2SC1815 Silicon Epitaxial Planar TransistorFEATURES A High voltage and high current SOT-23 Dim Min MaxVCEO=50V(Min),IC=150mA(Max). A 2.70 3.10E Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA B 1.10 1.50K B hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) C 1.0 TypicalD 0.4 Typical Low noise.E 0.35 0.48JD Complementary to 2SA1015. G 1.80 2.00APPLIC

 9.21. Size:180K  lge
c1815 to-92.pdf

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C1815 Transistor(NPN)TO-921.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 60 VCollector-Base Voltage VCEO 50 VCollector-Emitter Voltage VEBO 5 VEmitter-Base Voltage Dimensions in inches and (millimeters)IC Collector Current -Continuous 150 mA PC Collector Power Dissi

 9.22. Size:218K  lge
c1815 sot-23.pdf

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C1815BF-Y

C1815 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING : C1815=HF Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150

 9.23. Size:291K  wietron
c1815.pdf

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C1815BF-Y

C1815 NPN Plastic-Encapsulate Transistors P b Lead(Pb)-FreeTO92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS* TA=25 unless otherwise noted 3.BASE Symbol Parameter Value UnitsVCBO 60 VCollector-Base Voltage 1 2 3 VCEO 50 VCollector-Emitter Voltage VEBO 5 VEmitter-Base Voltage IC Collector Current -Continuous 150 mA PD Total D

 9.24. Size:230K  wietron
c1815lt1.pdf

C1815BF-Y
C1815BF-Y

C1815LT1 C1815LT1 TRANSISTOR (NPN) SOT-23 * G Lead(Pb)-Free 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25 ) 2. 4 Collector current 1. 3 ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25 unless other

 9.25. Size:477K  willas
c1815.pdf

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C1815BF-Y

FM120-MWILLASTHRU 1 15 SOT-23 Plastic-Encap sulate TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProdPackage outlineFeatures Batch process design, excellent power dissipation offers better revSOD-123HSOT-23 TRANSISTOR (NPN) lerse leakage current and thermal resistance. Low profi e surface mounted appl

 9.26. Size:46K  hsmc
hsc1815.pdf

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C1815BF-Y

Spec. No. : HE6523HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2006.07.28MICROELECTRONICS CORP.Page No. : 1/4HSC1815NPN Epitaxial Planar TransistorDescriptionThe HSC1815 is designed for use in driver stage of AF amplifier general purposeamplification. TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.........................................

 9.27. Size:544K  shenzhen
2sc1815.pdf

C1815BF-Y
C1815BF-Y

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1815 TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : 2SC1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base

 9.28. Size:849K  shenzhen
c1815.pdf

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR (NPN) TO92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS* TA=25 unless otherwise noted 3.BASE Symbol Parameter Value UnitsVCBO -60 VCollector-Base Voltage 1 2 3 VCEO -50 VCollector-Emitter Voltage VEBO -5 VEmitter-Base Voltage

 9.29. Size:284K  can-sheng
c1815 sot-23.pdf

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ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors C1815 TRANSISTOR (NPN) FEATURES Power dissipation MARKING:HF MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

 9.30. Size:433K  can-sheng
c1815.pdf

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C1815BF-Y

SOT-23 Plastic Encapsulate TransistorsSOT-FEATURES23Power dissipationMARKING :MARKING :MARKING : C1815=HFMARKING :1 BASE2 EMITTERMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS3 COLLECTOSymbol Parameter Value UnitsSymbol Parameter Value UnitsSymbol Parameter Value UnitsSymbol Parameter Value Units

 9.31. Size:853K  blue-rocket-elect
2sc1815.pdf

C1815BF-Y
C1815BF-Y

2SC1815 Rev.E Nov.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features ,, h ,, 2SA1015 FEHigh voltage and high current, excellent hFE linearity ,low noise ,complementary pair with 2SA1015. / Applications

 9.32. Size:887K  blue-rocket-elect
2sc1815m.pdf

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C1815BF-Y

2SC1815M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,, h ,FEHigh voltage and high current, excellent hFE linearity ,low noise. / Applications ,A

 9.33. Size:141K  semtech
mmbtsc1815o mmbtsc1815y mmbtsc1815g mmbtsc1815l.pdf

C1815BF-Y
C1815BF-Y

MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO

 9.34. Size:138K  semtech
2sc1815o 2sc1815y 2sc1815g 2sc1815l.pdf

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2SC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor 2SA1015 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurations.

 9.35. Size:268K  first silicon
ftc1815.pdf

C1815BF-Y
C1815BF-Y

SEMICONDUCTORFTC1815TECHNICAL DATA FEATURES B CGeneral Purpose NPN Transistor DIM MILLIMETERSA 4.70 MAXEMAXIMUM RATINGS (TA=25 unless otherwise noted) B 4.80 MAXGC 3.70 MAXDD 0.55 MAXSymbol Parameter Value Units E 1.00F 1.27VCBO Collector-Base Voltage 60 V G 0.85H 0.45_VCEO Collector-Emitter Voltage 50 V HJ 14.00 + 0.50L 2.30F FVEBO Emitter-Ba

 9.36. Size:945K  kexin
2sc1815.pdf

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SMD Type orSMD Type TransistICsNPN Transistors2SC1815SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features1 2Power dissipation+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO 60 VCollector to Emitter Voltage VCEO 50 VEmitter to Base Voltage VE

 9.37. Size:122K  hfzt
2sc1815lt1.pdf

C1815BF-Y

2SC1815LT1 NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SA1015 * Collector Current :Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 60 V Collector-Emitter Voltage Vceo 50 V Emitter-Base Voltage Vebo 5 V PIN: 1 2 3Collector Current Ic 150 mA STYLE Collector Dissipation Ta=25* PD 225 mWNO

 9.38. Size:1627K  slkor
c1815.pdf

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C1815BF-Y

C1815 TRANSISTOR NPNTRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOVC Collector-Emitter Voltage 50 V EOV Emitter-Base Voltage 5 V EBOI Collector Current 150 mA CP Collector Power Dissipation 200 mW

 9.39. Size:521K  slkor
2sc2078b 2sc1815c 2sc1815d 2sc1815e.pdf

C1815BF-Y

2SC2078Silicon NPN POWER TRANSISTORDESCRIPTIONB FSEATINGT PLANEC 4Designed primarily for SSB linear powerTSamplifier applicationsAQ1 2 3HFEATURESUKZ Specified 12.5V, 27MHz CharacteristicsL PO = 4W PEPV ft = 200 MHzSTYLE 1:RGPIN 1. BASE2. COLLECTORJD3. EMITTERN4. COLLECTORDIMENSIONSUNIT A B C D F G H J K L N Q R

 9.40. Size:95K  sunroc
c1815.pdf

C1815BF-Y

SUNROCSOT-23 C1815 TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200

 9.41. Size:619K  fuxinsemi
c1815.pdf

C1815BF-Y
C1815BF-Y

 9.42. Size:837K  jsmsemi
c1815.pdf

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C1815BF-Y

C1815Silicon Epitaxial Planar Transistor FEATURES High voltage and high current V =50V(Min),I =150mA(Max) CEO C Excellent h linearity : h =100 (Typ) at V =6V,I =150mA FE FE(2) CE C h (I =0.1mA) / h (I =2mA=0.95(Typ)) FE C FE C Low noise Complementary to 2SA1015 APPLICATIONS SOT-23 Audio frequency general purpose amplifier applications. MAXIMUM RATIN

 9.43. Size:604K  mdd
2sc1815.pdf

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C1815BF-Y

2SC1815 SOT-23 Plastic-Encapsulate Transistors2SC1815 TRANSISTOR (NPN)SOT-23 FEATURES Power dissipation MARKING:2SC1815=HF 1. BASE2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector to Base Voltage 60 V CBOV Collector to Emitter Voltage 50 V CEOVEBO Emitter to Base Voltage 5 V IC Collector Current

 9.44. Size:4258K  msksemi
2sc1815-ms.pdf

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www.msksemi.com2SC1815-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN)FEATURES Power dissipation 1. BASEMARKING : HF 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOVCEO Collector-Emitter Voltage 50 V V Emitter-Base Voltage 5 V EBOI Collector Cur

 9.45. Size:470K  cn shikues
c1815o c1815y c1815g c1815l.pdf

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C1815BF-Y

 9.46. Size:920K  cn yongyutai
2sc1815.pdf

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C1815BF-Y

2SC1815SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES MARKING:HF MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 50 V VEBO Emitter-Base Volta

 9.47. Size:1732K  cn twgmc
2sc1815.pdf

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2SC18152 SC1815 TRANSISTOR (NPN) FEATURE SOT-23 Power dissipation 1BASE 2EMITTER 3COLLECTOR MARKING : HF MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 150 mAPC Collector Power Dissipation 200 mWT

 9.48. Size:474K  cn cbi
c1815.pdf

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C1815BF-Y

C1815 TRANSISTOR (NPN) FEATURE SOT-23 Power dissipation 1BASE 2EMITTER 3COLLECTOR MARKING : HF MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW Tj Junc

 9.49. Size:2041K  cn goodwork
2sc1815.pdf

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C1815BF-Y

2SC1815NPN GENERAL PURPOSE SWITCHING TRANSISTOR60Volts POWER 200mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=50V.Collector current IC=0.15A.ansition frequency fT>80MHz @ TrIC=1mAdc, VCE=10Vdc, f=30MHz.In compliance with EU RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: Solde

 9.50. Size:1084K  cn hottech
2sc1815.pdf

C1815BF-Y
C1815BF-Y

2SC1815BIPOLAR TRANSISTOR (NPN)FEATURES High current And High voltage Excellent h LinearityFE Low Noise Surface Mount device Complementary to 2SA1015SOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise no

 9.51. Size:175K  inchange semiconductor
2sc1815.pdf

C1815BF-Y
C1815BF-Y

INCHANGE Semiconductorisc Silicon NPN Transistor 2SC1815DESCRIPTIONHigh Voltage and High CurrentVceo=50V(Min.Ic=150mA(Max)Excellent hFE LinearityLow NoiseComplement to Type 2SA1015(O,Y,GR class)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency general purpose amplifier ApplicationsDriver sta

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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