C2383B Datasheet, Equivalent, Cross Reference Search
Type Designator: C2383B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO92L
C2383B Transistor Equivalent Substitute - Cross-Reference Search
C2383B Datasheet (PDF)
c2383b.pdf
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MAIN CHARACTERISTICS FEATURES IC 1.0A Epitaxial silicon VCEO 160V High switching speed PC 0.9W RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency power transform P
2sc2383.pdf
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2SC2383 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383 Color TV Vertical Deflection Output Applications Unit: mmColor TV Class-B Sound Output Applications High breakdown voltage: VCEO = 160 V Large continuous collector current capability Recommended for vertical deflection output & sound output applications for line-operated TVs. Complem
fjc2383.pdf
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July 2005FJC2383NPN Epitaxial Silicon Transistor Color TV Audio Output & Color TV Vertical Deflection OutputMarking2 3 8 3P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE grageAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Ratings UnitsVCBO Collector-Base Voltage 160 VVCEO Collector-Emitter Voltage 160 VVEBO Emitt
ksc2383.pdf
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KSC2383Color TV Audio Output & Color TV Vertical Deflection OutputTO-92L11. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 160 VVCEO Collector-Emitter Voltage 160 VVEBO Emitter-Base Voltage 6 VIC Collector Current 1 AIB Base Current 0.5 APC
ksc2383.pdf
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KSC2383 NPN EPITAXIAL SILICON TRANSISTORCOLOR TV AUDIO OUTPUTTO-92LCOLOR TV VERTICAL DEFLECTION OUTPUTABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 160 VCollector-Emitter Voltage VCEO 160 VEmitter-Base Voltage VEBO 6 VCollector Current IC 1 ABase Current IB 0.5 ACollector Dissipation PC 900 WJunction Temperature TJ 150St
2sc2383-r.pdf
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2SC2383-RMCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-OCA 91311Phone: (818) 701-49332SC2383-YFax: (818) 701-4939Features Capable of 0.9Watts of Power Dissipation.NPN Silicon Collector-current 1.0A Collector-base Voltage 160VPlastic-Encapsulate Operating and storage junction temperature range: -55O
2sc2383-o.pdf
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2SC2383-RMCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-OCA 91311Phone: (818) 701-49332SC2383-YFax: (818) 701-4939Features Capable of 0.9Watts of Power Dissipation.NPN Silicon Collector-current 1.0A Collector-base Voltage 160VPlastic-Encapsulate Operating and storage junction temperature range: -55O
2sc2383-y.pdf
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2SC2383-RMCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-OCA 91311Phone: (818) 701-49332SC2383-YFax: (818) 701-4939Features Capable of 0.9Watts of Power Dissipation.NPN Silicon Collector-current 1.0A Collector-base Voltage 160VPlastic-Encapsulate Operating and storage junction temperature range: -55O
2sc2383p.pdf
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2SC2383PElectrical Characteristics @ TA=25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO IC=100A, IE=0Collector-Base Breakdown Voltage 160 VV(BR)CEO IC=10mA, IB=0Collector-Emitter Breakdown Voltage 160 VV(BR)EBO IE=10A, IC=0Emitter-Base Breakdown Voltage 6 VICBO VCB=150V, IE=0Collector-Base Cutoff Current 1 AIEBO VEB=6V, IC=0
ksc2383ota ksc2383yta.pdf
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KSC2383NPN Epitaxial Silicon TransistorTO-92L11. Emitter 2. Collector 3. BaseOrdering InformationPart Number Top Mark Package Packing MethodKSC2383OTA C2383 O- TO-92 3L AmmoKSC2383YTA C2383 Y- TO-92 3L AmmoAbsolute Maximum RatingsStresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-ble above the recommended operatin
ksc2383.pdf
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NPN Epitaxial SiliconTransistorKSC2383ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25C unless otherwise noted.)www.onsemi.comSymbol Parameter Value UnitVCBO Collector-Base Voltage 160 VVCEO Collector-Emitter Voltage 160 VVEBO Emitter-Base Voltage 6 VIC Collector Current 1 AIB Base Current 0.5 ATO-92 3 LFCASE 135AMTJ Junction Temperature 150 CTSTG Storage Temper
2sc2383.pdf
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UNISONIC TECHNOLOGIES CO., LTD 2SC2383 Preliminary NPN EPITAXIAL SILICON TRANSISTOR COLOR TV AUDIO OUTPUT & COLOR TV VERTICAL OUTPUT DESCRIPTION The UTC 2SC2383 is an NPN epitaxial silicon transistor, it uses UTCs advanced technology to provide customers high DC current gain and high breakdown voltage. The UTC 2SC2383 is usually used in Color TV Vertical Deflection Output
2sc2383.pdf
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2SC2383 1A , 160V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 General Purpose Application 123B C ACLASSIFICATION OF hFE E ECProduct-Rank 2SC2383-O 2SC2383-Y Range 100~200 160~320 B DF GH KCollector PACKAGE INFORMATI
2sc2383.pdf
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors JC TTO-92MOD 2SC2383 TRANSISTOR (NPN) FEATURE 1. EMITTER High Voltage: VCEO=160V 2. COLLECTOR Large Continuous Collector Current Capability Complementary to 2SA1013 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base
2sc2383 to-92l.pdf
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2SC2383 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.1001Features7.8008.200 High voltage: VCEO=160V 0.6000.800 Large continuous collector current capability Complementary to 2SA1013 0.3500.55013.80014.2001.270 TYPDimensions in inches and (millimeters)2.440MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.6400.
2sc2383.pdf
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2SC2383 TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 12. COLLECTOR 2 3 3. BASE 5.800Features6.200 High voltage: VCEO=160V 8.4008.800Large continuous collector current capability 0.900Complementary to 2SA1013 1.1000.4000.60013.80014.2001.500 TYP2.900Dimensions in inches and (millimeters)3.100MAXIMUM RATINGS (TA=25 unless otherwis
btc2383a3.pdf
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Spec. No. : C316 Issued Date : 2005.12.21 CYStech Electronics Corp.Revised Date : 2006.03.17 Page No. : 1/9 General Purpose NPN Epitaxial Planar Transistor BTC2383A3Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Complementary to BTA1013A3 Pb-free package Symbol Outlin
btc2383k3.pdf
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Spec. No. : C625K3 Issued Date : 2014.04.17 CYStech Electronics Corp.Revised Date : Page No. : 1/8 NPN Epitaxial Planar TransistorBVCEO 160VIC 1ABTC2383K3RCESAT(MAX) 1 Features High breakdown voltage , BV =160V CEO Low Saturation Voltage, V =0.2V(typ)@I =500mA, I =50mA CE(sat) C B Complementary to BTA1013K3 Pb-free lead plating and halogen-free
2sc2383t.pdf
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2SC2383T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features V , 2SA1013T CEOHigh VCEO, complementary pair with 2SA1013T. / Applications ,Color TV class B sound output applications.
2sc2383.pdf
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2SC2383 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features V , 2SA1013 CEOHigh VCEO, complementary pair with 2SA1013. / Applications ,Color TV class B sound output applications..
ftc2383.pdf
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SEMICONDUCTOR FTC2383TECHNICAL DATA BFTC2383 TRANSISTOR (NPN) EColor TV Audio Output & Color TV Vertical Deflection OutputDIM MILLIMETERSA 8.2 MAXDB 5.1 MAXC 1.58 MAXD 0.55 MAXE 0.7 TYP FEATUREF 1.27 TYPG 2.54 TYPF High Voltage: VCEO=160V H 14.20 MAX GJ 0.45 MAX L 4.10 MAX Large Continuous Collector Current Capability Complementary to FTA1013 C
2sc2383.pdf
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SMD Type TransistorsNPN Transistors2SC23831.70 0.1 Features High voltage: VCEO=160V Large continuous collector current capability0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Collector
c2383a.pdf
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TRANSISTOR C2383A MAIN CHARACTERISTICS FEATURES IC 1.0A Epitaxial silicon VCEO 160V High switching speed PC 900mW A1013 Complementary pair with A1013 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier
2sc2383-o 2sc2383-y.pdf
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2SC2383NPN Transistors FeaturesExcellent h characteristicsFE 321.Base12.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Value Unit Collector Base Voltage VCBO 160 VCollector Emitter Voltage VCEO 160 VEmitter Base Voltage VEBO 6 VCollector Current IC 1 ABase Current IB 0.5 ACollector Power
2sc2383-o 2sc2383-y.pdf
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2SC2383 SOT-89 NPN Transistors3 Features2 Small Flat Package1.Base1 General Purpose Application2.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC 1
2sc2383.pdf
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INCHANGE Semiconductorisc Silicon NPN Pow Transistor 2SC2383DESCRIPTIONHigh breakdown voltageLow output capacitanceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV class B sound output applicationsColor TV vert.deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
![C2383B](https://alltransistors.com/images/us.png)
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