All Transistors. 2SA1166A Datasheet

 

2SA1166A Datasheet and Replacement


   Type Designator: 2SA1166A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 160 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 180 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 320 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: MT-200
 
   - BJT ⓘ Cross-Reference Search

   

2SA1166A Datasheet (PDF)

 7.1. Size:160K  jmnic
2sa1166.pdf pdf_icon

2SA1166A

JMnic Product Specification Silicon PNP Power Transistors 2SA1166 DESCRIPTION With MT-200 package High power dissipation APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER

 7.2. Size:217K  inchange semiconductor
2sa1166.pdf pdf_icon

2SA1166A

isc Silicon PNP Power Transistor 2SA1166DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommended for 100W high-fidelity audio frequencyamplifier output stageABSOLUTE MAXI

 8.1. Size:216K  toshiba
2sa1162-o 2sa1162-y 2sa1162-gr.pdf pdf_icon

2SA1166A

2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70 to 400 Low noise: NF = 1dB (typ.), 10dB (max) Complementar

 8.2. Size:172K  toshiba
2sa1162.pdf pdf_icon

2SA1166A

2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70~400 Low noise: NF = 1dB (typ.), 10dB (max) Complementary t

Datasheet: 2SA1160A , 2SA1160B , 2SA1160C , 2SA1161 , 2SA1162 , 2SA1163 , 2SA1164 , 2SA1166 , 13001-A , 2SA1169 , 2SA117 , 2SA1170 , 2SA1171 , 2SA1173 , 2SA1174 , 2SA1175 , 2SA1177 .

Keywords - 2SA1166A transistor datasheet

 2SA1166A cross reference
 2SA1166A equivalent finder
 2SA1166A lookup
 2SA1166A substitution
 2SA1166A replacement

 

 
Back to Top

 


 
.