C2655B Datasheet and Replacement

   Type Designator: C2655B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO92L

C2655B Substitution

- BJT Cross-Reference Search

C2655B Datasheet (PDF)

..1. Size:333K feihonltd
c2655b.pdf pdf_icon

TRANSISTOR C2655B MAIN CHARACTERISTICS FEATURES IC 800mA Epitaxial silicon VCEO 25V High switching speed PC 625mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency power

9.1. Size:167K toshiba
2sc2655o 2sc2655y.pdf pdf_icon

2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit: mmPower Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SA1020. Absolute Maximum

9.2. Size:148K toshiba
2sc2655.pdf pdf_icon

9.3. Size:385K mcc
2sc2655l-o.pdf pdf_icon

MCCMicro Commercial ComponentsTM 2SC2655L-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2655L-YPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. NPN Collector-current 2.0A Plastic-Encapsulate Operating and storage junction temper

9.4. Size:385K mcc
2sc2655l-y.pdf pdf_icon

9.5. Size:405K mcc
2sc2655-o.pdf pdf_icon

MCCMicro Commercial ComponentsTM 2SC2655-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2655-YPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. NPN Collector-current 2.0A Plastic-Encapsulate Operating and storage junction temperat

9.6. Size:405K mcc
2sc2655-y.pdf pdf_icon

9.7. Size:281K utc
2sc2655l-o 2sc2655l-y.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: TSTG=1.0s (Typ.) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3- 2SC2655Gx-AB3-R SOT-89 B C E Tape Reel-

9.8. Size:345K utc
2sc2655.pdf pdf_icon

9.9. Size:212K secos
2sc2655.pdf pdf_icon

2SC2655 2A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES Low saturation voltageVCE(sat)=0.5V(Max)(IC=1A) AD High speed switching timetstg=1s(Typ.) B Complementary to 2SA1020 KEFCLASSIFICATION OF hFE (1) CProduct-Rank 2SC2655-O

9.10. Size:200K cdil
csa1020 csc2655.pdf pdf_icon

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyCOMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS CSA1020 PNPCSC2655 NPNTO-92Plastic PackageABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCEOCollector Emitter Voltage 50 VVCBOCollector Base Voltage 50 VVEBOEmitter Base Voltage 5VIC

9.11. Size:11940K jiangsu
2sc2655.pdf pdf_icon

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors JC TTO-92L 2SC2655 TRANSISTOR (NPN) FEATURES 1.EMITTER Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) 2.COLLECTOR High Speed Switching Time: tstg=1s(Typ.) Complementary to 2SA1020 3.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Symbol UnitVCB

9.12. Size:251K lge
2sc2655 to-92l.pdf pdf_icon

2SC2655 TO-92L Transistor (NPN)TO-92L1.EMITTER 2.COLLECTOR 3.BASE 4.700 2 3 5.1001Features Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) 7.800 High speed switching time: tstg=1s(Typ.) 8.200 Complementary to 2SA1020 0.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.350Symbol Parameter Symbol Units0.55013.800VCBO Collector-Base Vo

9.13. Size:276K lge
2sc2655 to-92mod.pdf pdf_icon

2SC2655 TO-92MOD Transistor (NPN)1.EMITTER TO-92MOD1 22.COLLECTOR 3 3.BASE Features5.800 Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) 6.200 High speed switching time: tstg=1s(Typ.) Complementary to 2SA1020 8.4008.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.9001.100Symbol Parameter Symbol Units0.4000.600VCBO Collector-Base Voltag

9.14. Size:277K wietron
2sc2655.pdf pdf_icon

2SC2655NPN General Purpose TransistorsP b Lead(Pb)-Free1231.EMITTER3.BASE2.COLLECTORTO-92MOD ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO VIc=100A,IE=0 50 Collector-emitter breakdown voltage V(BR)CEO VIc=10mA,IB=0 50 Emitter-base breakdown voltag

9.15. Size:284K cystek
btc2655k3.pdf pdf_icon

Spec. No. : C602K3 Issued Date : 2011.12.21 CYStech Electronics Corp.Revised Date :2013.12.25 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 60VBTC2655K3IC 2ARCESAT(max) 300m Features High breakdown voltage, BV 60V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating packa

9.16. Size:261K cystek
btc2655s3.pdf pdf_icon

Spec. No. : C602S3 Issued Date : 2012.04.12 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BVCEO 50VBTC2655S3IC 2ARCESAT(max) 300m Features High breakdown voltage, BV 50V CEO Large continuous collector current capability Low collector saturation voltage Pb-free lead plating package Symbo

9.17. Size:304K can-sheng
c2655-92l.pdf pdf_icon

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.comTO-92L Plastic-Encapsulate Transistors TO-92L 2SC2655 TRANSISTOR (NPN) FEATURES 1.EMITTER Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) 2.COLLECTOR High speed switching time: tstg=1s(Typ.) Complementary to 2SA1020 3.BASE MAXIMUM RATINGS (TA=25 unless oth

9.18. Size:1426K blue-rocket-elect
2sc2655.pdf pdf_icon

2SC2655 Rev.F Sep.-2017 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features ,, 2SA1020 Low saturation voltage, high speed switching time, complementary to 2SA1020. / Applications ,Power amplifier and

9.19. Size:133K china
3sc2655.pdf pdf_icon

3DD2655(3SC2655) NPN A B C D E PCM Tc=75 0.9 W ICM 2 A Tjm 175 Tstg -55~150 VCE=10V Rth 111 /W IC=0.2A V(BR)CBO ICB=0.1mA 20 35 50 80 120 V V(BR)CEO ICE=0.1mA 20 35 50 80 120 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 20 A

9.20. Size:156K first silicon
ftc2655 to92l.pdf pdf_icon

SEMICONDUCTORFTC2655TECHNICAL DATAFEATURES Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) High Speed Switching Time: tstg=1s(Typ.) Complementary to FTA1020 TO-92L MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. EMITTER Symbol Parameter Symbol Unit 2. COLLECTOR VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V 3. BASE VEBO Emitter-Bas

9.21. Size:279K feihonltd
c2655a.pdf pdf_icon

TRANSISTOR C2655A MAIN CHARACTERISTICS FEATURES IC 2A Epitaxial silicon VCEO 50V High switching speed PC 0.9W A1020 Complementary to A1020 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier

9.22. Size:204K inchange semiconductor
2sc2655.pdf pdf_icon

isc Silicon NPN Pow Transistor 2SC2655DESCRIPTIONSilicon NPN epitaxial typeLow saturation voltageComplementary to 2SA1020100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsPower switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .