C9013B-I Datasheet, Equivalent, Cross Reference Search
Type Designator: C9013B-I
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 188
Noise Figure, dB: -
Package: TO92
C9013B-I Transistor Equivalent Substitute - Cross-Reference Search
C9013B-I Datasheet (PDF)
c9013b.pdf
TRANSISTOR C9013B MAIN CHARACTERISTICS FEATURES IC 500mA Epitaxial silicon VCEO 20V High switching speed VCBO 40V C9012 Complementary to C9012 PC 625mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier
ktc9013.pdf
SEMICONDUCTOR KTC9013TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURES Excellent hFE Linearity. Complementary to KTC9012.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25 )F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.50VCBOCollect
ktc9013sc.pdf
SEMICONDUCTOR KTC9013SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESExcellent hFE Linearity.Complementary to KTC9012SC.DIM MILLIMETERS_+A 2.90 0.123B 1.30+0.20/-0.15C 1.30 MAX1D 0.40+0.15/-0.05E 2.40+0.30/-0.20G 1.90MAXIMUM RATING (Ta=25)J 0.10K 0.00 ~ 0.10CHARACTERISTIC SYMBO
ktc9013s.pdf
SEMICONDUCTOR KTC9013STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_+Excellent hFE Linearity. A 2.93 0.20B 1.30+0.20/-0.15Complementary to KTC9012S.C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10QMAXIMUM RATING (Ta=25)L
2sc9013.pdf
Transistors2SC9013Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor
btc9013a3.pdf
Spec. No. : C203A3 Issued Date : 2014.02.17 CYStech Electronics Corp.Revised Date : 2014.02.24 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC9013A3Description The BTC9013A3 is designed for using in driver stage of AF amplifier and general purpose switching application. High current , I = 0.6A C Low V , V = 50mV(typ.) at I /I = 100mA/10mA,
ftc9013s.pdf
SEMICONDUCTORFTC9013STECHNICAL DATAXGeneral Purpose TransistorsNPN SiliconFEATURE3We declare that the material of product compliance with RoHS requirements.2ORDERING INFORMATION1DevicePackageShippingSOT-23FTC9013SX SOT 23 FTC9013SX10000/Tape&ReelSOT-233COLLECTORMAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO 20
c9013-h.pdf
TRANSISTOR C9013-H MAIN CHARACTERISTICS FEATURES IC 500mA Epitaxial silicon VCEO 20V High switching speed VCBO 40V C9012 Complementary to C9012 PC 625mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
