C9013-H-F Specs and Replacement

Type Designator: C9013-H-F

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 96

Noise Figure, dB: -

Package: TO92

 C9013-H-F Substitution

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C9013-H-F datasheet

 7.1. Size:601K  feihonltd

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C9013-H-F

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 9.1. Size:59K  kec

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C9013-H-F

SEMICONDUCTOR KTC9013 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity. Complementary to KTC9012. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO Collect... See More ⇒

 9.2. Size:350K  kec

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C9013-H-F

SEMICONDUCTOR KTC9013SC TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES Excellent hFE Linearity. Complementary to KTC9012SC. DIM MILLIMETERS _ + A 2.90 0.1 2 3 B 1.30+0.20/-0.15 C 1.30 MAX 1 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 MAXIMUM RATING (Ta=25 ) J 0.10 K 0.00 0.10 CHARACTERISTIC SYMBO... See More ⇒

 9.3. Size:353K  kec

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C9013-H-F

SEMICONDUCTOR KTC9013S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS _ + Excellent hFE Linearity. A 2.93 0.20 B 1.30+0.20/-0.15 Complementary to KTC9012S. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 Q MAXIMUM RATING (Ta=25 ) L... See More ⇒

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Detailed specifications: C9013B-E, C9013B-F, C9013B-G, C9013B-H, C9013B-I, C9013-H, C9013-H-D, C9013-H-E, 2N5401, C9013-H-G, C9013-H-H, C9013-H-I, C945AF, C945AF-R, C945AF-Q, C945AF-P, C945AF-K

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