All Transistors. C945AF-P Datasheet

 

C945AF-P Datasheet and Replacement


   Type Designator: C945AF-P
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 52 V
   Maximum Emitter-Base Voltage |Veb|: 5.5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO92
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C945AF-P Datasheet (PDF)

 8.1. Size:468K  feihonltd
 c945af.pdf pdf_icon

C945AF-P

TRANSISTOR C945AF MAIN CHARACTERISTICS FEATURES IC 150mA Epitaxial silicon VCEO 52V High switching speed VCBO 70V RoHS RoHS product PC 400mW APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency p

 9.1. Size:309K  cystek
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C945AF-P

Spec. No. : C204A3 Issued Date : 2003.04.01 CYStech Electronics Corp.Revised Date : 2014.06.10 Page No. : 1 / 7 General Purpose NPN Epitaxial Planar Transistor BTC945A3Description The BTC945A3 is designed for use in driver stage of AF amplifier and low speed switching. Complementary to BTA733A3. Pb-free package Symbol Outline BTC945A3 TO-92 BBase C

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: GMJ2955 | GSTS9014LT1 | 2SD1807

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