C945B-Q Datasheet, Equivalent, Cross Reference Search
Type Designator: C945B-Q
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 52 V
Maximum Emitter-Base Voltage |Veb|: 5.5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 135
Noise Figure, dB: -
Package: TO92
C945B-Q Transistor Equivalent Substitute - Cross-Reference Search
C945B-Q Datasheet (PDF)
ktc945b.pdf
SEMICONDUCTOR KTC945BTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity.: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)N DIM MILLIMETERSLow Noise : NF=1dB(Typ.). at f=1kHzA 4.70 MAXEKB 4.80 MAXComplementary to KTA733B(O, Y, GR class). GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_MA
ftc945b.pdf
SEMICONDUCTORFTC945BTECHNICAL DATANPN TRANSISTOR B CFEATURE Excellent hFE linearity DIM MILLIMETERS Low noise A 4.70 MAXEB 4.80 MAXG Complementary to FTA733B C 3.70 MAXDD 0.55 MAXE 1.00MAXIMUM RATINGS (Ta=25 unless otherwise noted) F 1.27G 0.85H 0.45Symbol Parameter Value Units_HJ 14.00 + 0.50L 2.30F FVCBO Collector-Base Voltage 60 V
c945b.pdf
TRANSISTOR C945B MAIN CHARACTERISTICS FEATURES IC 150mA Epitaxial silicon VCEO 52V High switching speed VCBO 70V RoHS RoHS product PC 400mW APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency po
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: CD066 | 2SC2258AR | CD1207
