C945B-P Specs and Replacement
Type Designator: C945B-P
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 52 V
Maximum Emitter-Base Voltage |Veb|: 5.5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 200
Package: TO92
C945B-P Substitution
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C945B-P datasheet
SEMICONDUCTOR KTC945B TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity. hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) N DIM MILLIMETERS Low Noise NF=1dB(Typ.). at f=1kHz A 4.70 MAX E K B 4.80 MAX Complementary to KTA733B(O, Y, GR class). G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MA... See More ⇒
SEMICONDUCTOR FTC945B TECHNICAL DATA NPN TRANSISTOR B C FEATURE Excellent hFE linearity DIM MILLIMETERS Low noise A 4.70 MAX E B 4.80 MAX G Complementary to FTA733B C 3.70 MAX D D 0.55 MAX E 1.00 MAXIMUM RATINGS (Ta=25 unless otherwise noted) F 1.27 G 0.85 H 0.45 Symbol Parameter Value Units _ H J 14.00 + 0.50 L 2.30 F F VCBO Collector-Base Voltage 60 V ... See More ⇒
TRANSISTOR C945B MAIN CHARACTERISTICS FEATURES IC 150mA Epitaxial silicon VCEO 52V High switching speed VCBO 70V RoHS RoHS product PC 400mW APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency po... See More ⇒
Detailed specifications: C945AF, C945AF-R, C945AF-Q, C945AF-P, C945AF-K, C945B, C945B-R, C945B-Q, TIP3055, C945B-K, D667A, D880A, D880A-O, D880A-Y, D880A-G, D880C, D880C-O
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