D882B-P Specs and Replacement

Type Designator: D882B-P

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 90 typ MHz

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: TO126

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D882B-P datasheet

 9.1. Size:706K  blue-rocket-elect

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D882B-P

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 9.2. Size:426K  feihonltd

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D882B-P

MAIN CHARACTERISTICS FEATURES IC 3A Epitaxial silicon VCEO 30V PC 1.0W High switching speed B722 Complementary to B772 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequen... See More ⇒

Detailed specifications: D880A-G, D880C, D880C-O, D880C-Y, D880C-G, D882B, D882B-R, D882B-Q, BC327, D882B-E, D965A, D965A-P, D965A-Q, D965A-R, D965A-S, E13003DA, FHA13009A

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