All Transistors. D882B-P Datasheet

 

D882B-P Datasheet and Replacement


   Type Designator: D882B-P
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 90(typ) MHz
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: TO126
      - BJT Cross-Reference Search

   

D882B-P Datasheet (PDF)

 9.1. Size:706K  blue-rocket-elect
 2sd882b.pdf pdf_icon

D882B-P

2SD882B(BR3DA882BR) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features V ,h CE(sat) FELow saturation voltage, excellent hFE linearity and high hFE. / Applications 3 ,,

 9.2. Size:426K  feihonltd
 d882b.pdf pdf_icon

D882B-P

MAIN CHARACTERISTICS FEATURES IC 3A Epitaxial silicon VCEO 30V PC 1.0W High switching speed B722 Complementary to B772 RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequen

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N2907ACECC | FTC3199 | 2SC2383-Y | 2SD882D | C2383A-O | BD882-O | 2SC2383-O

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