All Transistors. 2SA1175 Datasheet

 

2SA1175 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA1175

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 135 °C

Transition Frequency (ft): 180 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO92

2SA1175 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA1175 Datasheet (PDF)

..1. 2sa1175.pdf Size:222K _nec

2SA1175 2SA1175

8.1. 2sa1179 2sa1179n.pdf Size:41K _sanyo

2SA1175 2SA1175

No. N71982SA1179N / 2SC2812NNo. N719872602PNP / NPN 2SA1179N / 2SC2812N 2SA1179N Absolu

8.2. 2sa1177.pdf Size:52K _sanyo

2SA1175 2SA1175

Ordering number:ENN851HPNP Epitaxial Planar Silicon Transistor2SA1177HF Amp ApplicationsUse Package Dimensions Ideally suited for use in FM RF amplifiers, mixers,unit:mmoscillators, converters, IF amplifiers.2033A[2SA1177]2.24.0Features High fT (230MHz typ.) and small Cre (1.1 pF typ.). Small NF (2.5dB typ.). 0.40.50.40.41 2 31.3 1.31 : Emitter

 8.3. 2sa1179n 2sc2812n.pdf Size:35K _sanyo

2SA1175 2SA1175

Ordering number : EN7198A2SA1179N / 2SC2812NSANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsLow-Frequency General-Purpose2SA1179N / 2SC2812NAmp ApplicationsFeatures Miniature package facilitates miniaturization in end products. High breakdown voltage.Specifications ( ) : 2SA1179NAbsolute Maximum Ratings at Ta=25CParameter Symbol Cond

8.4. 2sa1171.pdf Size:24K _hitachi

2SA1175 2SA1175

2SA1171Silicon PNP EpitaxialApplicationLow frequency small signal amplifierOutlineMPAK311. Emitter2. Base23. Collector2SA1171Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 90 VCollector to emitter voltage VCEO 90 VEmitter to base voltage VEBO 5 VCollector current IC 50 mACollector power dissipation P

 8.5. 2sa1170.pdf Size:37K _no

2SA1175

8.6. 2sa1179.pdf Size:179K _secos

2SA1175 2SA1175

2SA1179 -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High breakdown voltage AL33Top View C B11 2MARKING 2K EProduct Marking Code D2SA1179 MH JF GMillimeter MillimeterPACKAGE INFORMATION REF. REF.Min. Max. Min. Ma

8.7. 2sa1170.pdf Size:161K _jmnic

2SA1175 2SA1175

JMnic Product Specification Silicon PNP Power Transistors 2SA1170 DESCRIPTION With MT-200 package High power dissipation Complement to type 2SC2774 APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratin

8.8. 2sa1179.pdf Size:360K _htsemi

2SA1175 2SA1175

2SA1 1 7 9 TRANSISTOR(PNP) SOT-23 FEATURES . High breakdown voltage 1. BASE 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -55 VVCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA Pc Collector Power Dissipation 20

8.9. 2sa1179 sot-23.pdf Size:285K _lge

2SA1175 2SA1175

2SA1179 SOT-23 Transistor(PNP)1. BASE SOT-232. EMITTER 3. COLLECTOR Features High breakdown voltage MARKING: M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -55 VVCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -

8.10. 2sa1179.pdf Size:409K _kexin

2SA1175

SMD Type orSMD Type TransistICsPNP Transistors2SA1179SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesHigh breakdown voltage1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -55 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO

8.11. 2sa1171.pdf Size:666K _kexin

2SA1175 2SA1175

SMD Type orSMD Type TransistICsPNP Transistors2SA1171SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features1 2Low frequency small signal amplifier+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO -90 VCollector to emitter voltage VCEO -90 VEmitter

8.12. 2sa1173.pdf Size:924K _kexin

2SA1175 2SA1175

SMD Type TransistorsPNP Transistors2SA1173SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-140V Complementary to 2SC27800.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -140 Collector - Emitter Voltage V

8.13. 2sa1170.pdf Size:217K _inchange_semiconductor

2SA1175 2SA1175

isc Silicon PNP Power Transistor 2SA1170DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -200V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SC2774APPLICATIONSDesigned for power amplifier and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -200 VCBOV Collector-Emitter Voltage -200 V

Datasheet: 2SA1166 , 2SA1166A , 2SA1169 , 2SA117 , 2SA1170 , 2SA1171 , 2SA1173 , 2SA1174 , BU406 , 2SA1177 , 2SA1177D , 2SA1177E , 2SA1177F , 2SA1178 , 2SA1179 , 2SA1179M4 , 2SA1179M5 .

 

 
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