S8050DA Specs and Replacement
Type Designator: S8050DA
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Package: TO92
S8050DA Substitution
- BJT ⓘ Cross-Reference Search
S8050DA datasheet
IC 1.5A Epitaxial silicon VCEO 45V High switching speed PC 1W S8550DA Complementary to S8550DA RoHS RoHS product High frequency switch power supply Commonly power amplifier circuit High frequency power transform TO-92 ... See More ⇒
MCC Micro Commercial Components TM S8050-B 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S8050-C Phone (818) 701-4933 Fax (818) 701-4939 S8050-D Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. NPN Silicon Collector-current 0.5A Collector-base Voltage 40V Transistors Operating an... See More ⇒
Detailed specifications: FHP13007A, FHP13007A-H1, FHP13007A-H2, J13007-1A, J13007-1A-H1, J13007-1A-H2, KSP42A, KSP92A, 2SC2625, S8050DAF, S8050DAF-C, S8050DAF-D, S8050SDB, S8550DA, TIP31CA, TIP41CA, MMBT2222E
Keywords - S8050DA pdf specs
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