MMDT3052DW-F Datasheet and Replacement

MMDT3052DW ( NPN+NPN) Silicon Epitaxial Planar TransistorFeatures Each transistor elements are independentApplications For low frequency amplify applicationMARKING: 5GParameter Symbol Value UnitCollector Base Voltage VCBO 50 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mAPower Dissipation Ptot 150 mWJunction Temperature

MMDT3946 40V COMPLEMENTARY NPN-PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Complementary Pair One 3904-Type NPN Case: SOT363 One 3906-Type PNP Case Material: Molded Plastic, Green Molding Compound. Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Lev

MMDT3906 40V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data BVCEO > -40V Case: SOT363 IC = -200mA High Collector Current Case Material: Molded Plastic, Green Molding Compound; Epitaxial Planar Die Construction UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Lev

MMDT3906V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-563 Ideal for Low Power Amplification and Switching C1 B2 E2Dim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.25 Lead Free By Design/RoHS Compliant (Note 1) BC Qualified to AEC-Q101 Standards for High Reliability B 1.10 1.25 1.20

MMDT3946LP4 COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS Features Complementary Pair: One 3904 (NPN) and One 3906 (PNP) DFN1310H4-6 Epitaxial Planar Die Construction Dim Min Max Typ Ideally Suited for Automated Assembly Processes Lead Free by Design/RoHS Compliant (Note 1) A 1.25 1.38 1.30 Green Device (Note 2) Top View B 0.95 1.08 1.00Mecha

MMDT3904 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT363 Ideal for Medium Power Amplification and Switching Case Material: Molded Plastic, Green Molding Compound; Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (N

MMDT3904V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-563 Ideal for Low Power Amplification and Switching C1 B2 E2Dim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.25 Lead Free By Design/RoHS Compliant (Note 3) BC "Green" Device (Note 4 and 5) B 1.10 1.25 1.20 C 1.55 1.70 1.60 E1

MMDT3904VC 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT563 Features Mechanical Data BVCEO > 40V Case: SOT563 IC = 200mA High Collector Current Case Material: Molded Plastic, Green Molding Compound; Epitaxial Planar Die Construction UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Lev

MMDT3906VCLead-free GreenDUAL PNP SMALL SIGNAL SURFACE MOUNTTRANSISTORFeatures Epitaxial Planar Die ConstructionA Ideal for Low Power Amplification and SwitchingC1 B2 E2 Ultra-Small Surface Mount PackageSOT-563 Lead Free By Design/RoHS Compliant (Note 1)BC Dim Min Max Typ "Green" Device (Note 4)A0.15 0.30 0.25E1 B1 C2B1.10 1.25 1.20Mechanic

MMDT3946Features Complementary Pari: NPN(3904), PNP(3906) Ideal for Low Power Amplification and SwitchingNPN/PNP Epitaxial Planar Die Construction Halogen Free. Green Device (Note 1)Small Signal Surface Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingMount Transistors Lead Free Finish/RoHS Compliant ("P" Suffix Designates Ro

MMDT3906Features Epitaxial Planar Die Construction Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 PNP Epoxy Meets UL 94 V-0 Flammability RatingSmall Signal Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS TransistorsCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise SpecifiedSOT-363 Operatin

MMDT3906VFeatures Ideal for Low Power Amplification and Switching Halogen Free Available Upon Request By Adding Suffix "-HF"PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPlastic Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSTransistorsCompliant. See Ordering Information)Maximum Ratings @ 25C Unless Oth

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MMDT3906VMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNPRoHS Compliant. See ordering information) Epitaxial Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching Tran

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMDT3904VMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information) Epitaxial Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching Tra

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMDT3906Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNPRoHS Compliant. See ordering information) Ideal for Low Power Amplification and Switching Small Signal Surface Ultra-small Surface Mount Packa

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMDT3904VMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information) Epitaxial Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching Tra

MMDT3946 NPN / PNP Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C indicates halogen-free. SOT-363 FEATURE A Complementary PairE One 3904-Type NPN LOne 3906-Type PNP Epitaxial Planer Die Construction Ideal for Low Power Amplification and Switching B.MARKING FC HJD G K46 Millimeter MillimeterR

MMDT3906PNP Silicon Elektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductSOT-363 * Featureso.055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REF(0.525)REFPower dissipation.O.053(1.35.096(2.45) PCM : 0.2 W (Tamp.=25 C).045(1.15.085(2.15)Collector current.018(0.46).010(0.26)ICM : - 0.2 A

MMDT3904NPN Silicon Elektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-363* Featureso.055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REFPower dissipation(0.525)REFOPCM : 0.2 W (Tamp.= 25 C).053(1.35.096(2.45).045(1.15.085(2.15)Collector currentICM : 0.2 A.018(0.46).010(0.26).0

JC ET DUAL TRANSISTOR (NPN+PNP) 6 5 Complementary Pair 4 One 3904-Type NPN One 3906-Type PNP 123 Epitaxial Planar Die Construction Ideal for Low Po

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors SOT-363 MMDT3906 DUAL TRANSISTOR(PNP) FEATURES Epitaxial planar die construction Ideal for low power amplification and switching 1 MARKING:K3N MAXIMUM RATINGS(Ta=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO -40 VCollector-Emitte

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T MMDT3904DUAL TRANSISTOR (NPN+NPN) SOT-363 FEATURES Epitaxial planar die construction Ideal for low power amplification and switching MARKING:K6N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Coll

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors DUAL TRANSISTOR NPN+NPN) Epitaxial planar die construction Ideal for low power amplification and switching KAP Collector-Base Voltage 60

MMDT3946 Complementary NPN/PNP TransistorSOT-363Features Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MAKING: K46 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VC

MMDT3906SOT-363 Dual Transistor(PNP)SOT-363Features Epitaxial planar die construction Ideal for low power amplification and switching MARKING:K3N Dimensions in inches and (millimeters)MAXIMUM RATINGS(TA=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage VEBO -5

MMDT3904SOT-363 Dual Transistor(NPN)SOT-363Features Epitaxial planar die construction Ideal for low power amplification and switching MARKING:K6N MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage 5 V IC C

SMD Type TransistorsPNP TransistorsMMDT3906 (KMDT3906) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual PNP Transistors Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current -

SMD Type TransistorsNPN TransistorsMMDT3904 (KMDT3904) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual NPN Transistors Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current - Con

MMDT3946COMPLEMENTARY NPN/PNP GENERAL PURPOSE SWITCHING TRANSISTOR40 Volt POWER 225 mWattVOLTAGEFEATURES Epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current Ic = 200mA Transition Frequency> 300MHz fT@IC=10mA,VCE=20V, f=100MHz Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249

MMDT3906DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR 40 Volt POWER 200 mWattVOLTAGEFEATURES PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC = -200mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)MECHANICAL DATA Case: SOT-363, Plastic

MMDT3904DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR40 Volt POWER 225 mWattVOLTAGEFEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 200mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)MECHANICAL DATA Case: SOT-363, Plastic

MMDT3946Small Surface Mount Transistor FEATURES Complementary pair. One 3904-Type NPN. One 3906-Type PNP. Ideal for low power amplification and switching. Ultra-Small surface mount package. Expitaxial planar die construction. SOT-363 APPLICATIONS General switching and amplification. MAXIMUM RATIPN Section @ Ta=25 unless otherwise specified SYMBOL PARAMETE

MMDT3906 Dual PNP Small Signal TransistorsMMDT3906 Epoxy meets UL 94 V-0 flammability rating Lead Free Finish/RoHS Compliant For Switching and AF Amplifier Applications Rugged and reliable Maximum Ratings Ta = 25 Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V

MMDT3904Dual NPN Small Signal Surface Mount Transistor FEATURES Epitaxial planar die construction. Ideal for low power amplification and switching. Ultra-small surface mount package Also available in lead free version. APPLICATIONS General switching and amplification SOT-363 MAXIMUM RATING @ Ta=25 unless otherwise specified SYMBOL PARAMETER VALUE UNITVCBO c

MMDT3904SG Double NPN TransistorsFeatures SOT-23-6 For switching and amplifier applications4.C25.E13.B26.C12.E2Equivalent Circuit 1.B1Marking Code3904Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Value UnitCollector Base Voltage V 60 VCBOCollector Emitter Voltage V 40 VCEOEmitter Base Voltage

MMDT3906SG Double PNP Transistors Features SOT-23-6 For switching and amplifier applications4.C25.E13.B26.C12.E2Equivalent Circuit 1.B1Marking Code3906Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Value UnitCollector Base Voltage -V 40 VCBOCollector Emitter Voltage -V 40 VCEOEmitter Base Vol

MMDT3906MMDT3906MMDT3906MMDT39 0 6 DUAL TRANSISTOR(PNP+ PNP)SOT-363 6 54FEATURES 1Epitaxial planar die construction 23Ideal for low power amplification and switching MAXIMUM RATINGS(Ta=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Vo

MMDT3904MMDT3904MMDT3904MMDT39 0 4 DUAL TRANSISTOR(NPN+ NPN)FEATURES SOT-363 Epitaxial planar die construction 6 Ideal for low power amplification and switching 541MAXIMUM RATINGS (Ta=25 unless otherwise noted)23Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 5 VIC Colle

RoHS COMPLIANT MMDT3906 Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-363 P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking: K3N Equivalent circuit 1 / 5 S-S2844 Yangzhou

RoHSCOMPLIANT MMDT3904Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPNMechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable perJ-STD-002 and JESD22-B102 Marking: K6NEquivalent circuit 1 / 5 S-S2843 Yangzhou Yangjie El

MMDT3906 MMDT3906 SOT-363 Plastic-Encapsulate Transistors General description SOT-363 Plastic-Encapsulate Transistors FEATURES DUAL TRANSISTOR (PNP+PNP) Complementary to MMDT3904 Ideal for low power amplification and switching Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V

MMDT3904 MMDT3904 SOT-363 Plastic-Encapsulate Transistors General description SOT-363 Plastic-Encapsulate Transistors FEATURES DUAL TRANSISTOR (NPN+NPN) Epitaxial planar die construction Ideal for low power amplification and switching Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5

SOT-363 Plastic-Encapsulate TransistorsSOT-363 DUAL TRANSISTOR (PNP+PNP) MMDT3906DWFEATURES Epitaxial planar die construction Ideal for low power amplification and switching MARKING:K3N MAXIMUM RATINGS(Ta=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage VEBO

SOT -363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN) MMDT3904DW SOT-363 FEATURES Epitaxial planar die construction Ideal for low power amplification and switching MARKING:K6N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC

Epitaxial planar die construction Ideal for low power amplification and switching KAP Collector-Base Voltage 60 V Collector-Emitter Voltage 40 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.2 A Collector

SOT-363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+PNP) MMDT3946DWSOT-363 FEATURES Complementary Pair One 3904-Type NPN One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MAKING: K46 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Co

MMDT3904DUAL TRANSISTORNPN+NPN0.2A, 40V, 60V SOT-363 Plastic-Encapsulate Transistors MMDT3904DUAL TRANSISTORNPN+NPNFEATURESEpitaxial planar die constructionIdeal for low power amplification and switchingMAXIMUM RATINGSTa=25 unless otherwise notedSymbol Parameter Value UnitsVCBOCollector-Base