MMDT3906DW Datasheet, Equivalent, Cross Reference Search

SOT-363 Plastic-Encapsulate TransistorsSOT-363 DUAL TRANSISTOR (PNP+PNP) MMDT3906DWFEATURES Epitaxial planar die construction Ideal for low power amplification and switching MARKING:K3N MAXIMUM RATINGS(Ta=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage VEBO

MMDT3906 40V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data BVCEO > -40V Case: SOT363 IC = -200mA High Collector Current Case Material: Molded Plastic, Green Molding Compound; Epitaxial Planar Die Construction UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Lev

MMDT3906V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-563 Ideal for Low Power Amplification and Switching C1 B2 E2Dim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.25 Lead Free By Design/RoHS Compliant (Note 1) BC Qualified to AEC-Q101 Standards for High Reliability B 1.10 1.25 1.20

MMDT3906VCLead-free GreenDUAL PNP SMALL SIGNAL SURFACE MOUNTTRANSISTORFeatures Epitaxial Planar Die ConstructionA Ideal for Low Power Amplification and SwitchingC1 B2 E2 Ultra-Small Surface Mount PackageSOT-563 Lead Free By Design/RoHS Compliant (Note 1)BC Dim Min Max Typ "Green" Device (Note 4)A0.15 0.30 0.25E1 B1 C2B1.10 1.25 1.20Mechanic

MMDT3906Features Epitaxial Planar Die Construction Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 PNP Epoxy Meets UL 94 V-0 Flammability RatingSmall Signal Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS TransistorsCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise SpecifiedSOT-363 Operatin

MMDT3906VFeatures Ideal for Low Power Amplification and Switching Halogen Free Available Upon Request By Adding Suffix "-HF"PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPlastic Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSTransistorsCompliant. See Ordering Information)Maximum Ratings @ 25C Unless Oth

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MMDT3906VMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNPRoHS Compliant. See ordering information) Epitaxial Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching Tran

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMDT3906Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNPRoHS Compliant. See ordering information) Ideal for Low Power Amplification and Switching Small Signal Surface Ultra-small Surface Mount Packa

MMDT3906PNP Silicon Elektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductSOT-363 * Featureso.055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REF(0.525)REFPower dissipation.O.053(1.35.096(2.45) PCM : 0.2 W (Tamp.=25 C).045(1.15.085(2.15)Collector current.018(0.46).010(0.26)ICM : - 0.2 A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors SOT-363 MMDT3906 DUAL TRANSISTOR(PNP) FEATURES Epitaxial planar die construction Ideal for low power amplification and switching 1 MARKING:K3N MAXIMUM RATINGS(Ta=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO -40 VCollector-Emitte

MMDT3906SOT-363 Dual Transistor(PNP)SOT-363Features Epitaxial planar die construction Ideal for low power amplification and switching MARKING:K3N Dimensions in inches and (millimeters)MAXIMUM RATINGS(TA=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage VEBO -5

SMD Type TransistorsPNP TransistorsMMDT3906 (KMDT3906) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual PNP Transistors Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current -

MMDT3906DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR 40 Volt POWER 200 mWattVOLTAGEFEATURES PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC = -200mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)MECHANICAL DATA Case: SOT-363, Plastic

MMDT3906 Dual PNP Small Signal TransistorsMMDT3906 Epoxy meets UL 94 V-0 flammability rating Lead Free Finish/RoHS Compliant For Switching and AF Amplifier Applications Rugged and reliable Maximum Ratings Ta = 25 Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V

MMDT3906SG Double PNP Transistors Features SOT-23-6 For switching and amplifier applications4.C25.E13.B26.C12.E2Equivalent Circuit 1.B1Marking Code3906Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Value UnitCollector Base Voltage -V 40 VCBOCollector Emitter Voltage -V 40 VCEOEmitter Base Vol

MMDT3906MMDT3906MMDT3906MMDT39 0 6 DUAL TRANSISTOR(PNP+ PNP)SOT-363 6 54FEATURES 1Epitaxial planar die construction 23Ideal for low power amplification and switching MAXIMUM RATINGS(Ta=25 unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Vo

RoHS COMPLIANT MMDT3906 Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-363 P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking: K3N Equivalent circuit 1 / 5 S-S2844 Yangzhou

MMDT3906 MMDT3906 SOT-363 Plastic-Encapsulate Transistors General description SOT-363 Plastic-Encapsulate Transistors FEATURES DUAL TRANSISTOR (PNP+PNP) Complementary to MMDT3904 Ideal for low power amplification and switching Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V